component
STD4NK60ZT4
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std4nk60zt4: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+261
README.md+26@@ -21,6 +21,32 @@ STD4NK60ZT4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 600 | V | | 2 |+| Gate-source voltage | VGS | -30 | | 30 | V | | 2 |+| Drain current (continuous) | ID | | | 4 | A | TC = 25 °C | 2 |+| Drain current (continuous) | ID | | | 2.5 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 16 | A | Pulse width limited by safe operating area | 2 |+| Total power dissipation | PTOT | | | 70 | W | TC = 25 °C | 2 |+| Gate-source ESD (human body model) | ESD | | | 3 | kV | R = 1.5 kΩ, C = 100 pF | 2 |+| Peak diode recovery voltage slope | dv/dt | | | 4.5 | V/ns | ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS | 2 |+| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |+| Thermal resistance, junction-to-case | RthJC | | | 1.79 | °C/W | | 2 |+| Thermal resistance, junction-to-ambient | RthJA | | | 50 | °C/W | When mounted on an 1-inch² FR-4, 2 Oz copper board | 2 |+| Avalanche current, repetitive or not repetitive | IAR | | | 4 | A | Pulse width limited by TJ max. | 2 |+| Single pulse avalanche energy | EAS | | | 120 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | ID = 1 mA, VGS = 0 V | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 600 V | 3 |+| Zero gate voltage drain current | IDSS | | | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 3 |+| Gate body leakage current | IGSS | -10 | | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 |+| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 50 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 1.7 | 2 | Ω | VGS = 10 V, ID = 2 A | 3 |+ ## CAD (KiCad official) - Symbol: `STD4NK60ZT4`
page.json+235@@ -133,6 +133,241 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9ecf94526d1f2463",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source ESD (human body model)",+ "symbol": "ESD",+ "kind": "absolute_maximum",+ "unit": "kV",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "R = 1.5 kΩ, C = 100 pF",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.79,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "When mounted on an 1-inch² FR-4, 2 Oz copper board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "Pulse width limited by TJ max.",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "ID = 1 mA, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 600 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±20 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 3.75,+ "max": 4.5,+ "conditions": "VDS = VGS, ID = 50 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.7,+ "max": 2,+ "conditions": "VGS = 10 V, ID = 2 A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],