component
STB46N30M5
Public Made by Adomby adom
STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stb46n30m5: specified limits as data (metadata.characteristics, 40 rows from the datasheet)
2 files changed
+535−1
README.md+47@@ -21,6 +21,53 @@ STB46N30M5 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -25 | | 25 | V | | 2 |+| Drain current (continuous) at TC = 25 °C | ID | | | 53 | A | TC = 25 °C | 2 |+| Drain current (continuous) at TC = 100 °C | ID | | | 34 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 212 | A | Pulse width limited by safe operating area | 2 |+| Total power dissipation at TC = 25 °C | PTOT | | | 250 | W | TC = 25 °C | 2 |+| Peak diode recovery voltage slope | dv/dt | | | 15 | V/ns | ISD ≤ 53 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 240 V | 2 |+| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |+| Maximum operating junction temperature | TJ | | | 150 | °C | | 2 |+| Avalanche current, repetitive or not-repetitive | IAR | | | 16 | A | Pulse width limited by TJ max. | 2 |+| Single pulse avalanche energy | EAS | | | 550 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |+| Thermal resistance, junction-to-case | RthJC | | | 0.5 | °C/W | Junction-to-case | 2 |+| Thermal resistance, junction-to-ambient | RthJA | | | 30 | °C/W | When mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 300 | | | V | ID = 1 mA, VGS = 0 V | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 300 V | 3 |+| Zero gate voltage drain current (TC = 125 °C) | IDSS | | | 100 | µA | VGS = 0 V, VDS = 300 V, TC = 125 °C | 3 |+| Gate body leakage current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±25 V | 3 |+| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 37 | 40 | mΩ | VGS = 10 V, ID = 26.5 A | 3 |+| Source-drain current | ISD | | | 53 | A | | 4 |+| Source-drain current (pulsed) | ISDM | | | 212 | A | | 4 |+| Forward on voltage | VSD | | | 1.5 | V | ISD = 53 A, VGS = 0 V | 4 |+| Input capacitance | Ciss | | 4240 | | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |+| Output capacitance | Coss | | 205 | | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |+| Reverse transfer capacitance | Crss | | 9.5 | | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |+| Equivalent output capacitance, time related | Co(tr) | | 373 | | pF | VDS = 0 to 240 V, VGS = 0 V | 3 |+| Equivalent output capacitance, energy related | Co(er) | | 202 | | pF | | 3 |+| Gate input resistance | Rg | | 1.4 | | Ω | f = 1 MHz open drain | 3 |+| Total gate charge | Qg | | 95 | | nC | VDD = 240 V, ID = 24 A, VGS = 0 to 10 V | 3 |+| Gate-source charge | Qgs | | 23 | | nC | VDD = 240 V, ID = 24 A, VGS = 0 to 10 V | 3 |+| Gate-drain charge | Qgd | | 37 | | nC | VDD = 240 V, ID = 24 A, VGS = 0 to 10 V | 3 |+| Voltage delay time | td(v) | | 66 | | ns | VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Voltage rise time | tr(v) | | 15 | | ns | VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Crossing time off | tc(off) | | 22.5 | | ns | VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Current fall time | tf(i) | | 24 | | ns | VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Reverse recovery time | trr | | 223 | | ns | ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery charge | Qrr | | 2.5 | | μC | ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery current | IRRM | | 23 | | A | ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery time (TJ = 150 °C) | trr | | 280 | | ns | ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Reverse recovery charge (TJ = 150 °C) | Qrr | | 3.9 | | μC | ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Reverse recovery current (TJ = 150 °C) | IRRM | | 28 | | A | ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+ ## CAD (KiCad official) - Symbol: `STB46N30M5`
page.json+488−1@@ -150,6 +150,493 @@ "Package": "D2PAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "18b316f0095821fc",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 53,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 34,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 212,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "ISD ≤ 53 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 240 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not-repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Pulse width limited by TJ max.",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 550,+ "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "Junction-to-case",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "When mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 300,+ "typ": null,+ "max": null,+ "conditions": "ID = 1 mA, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 300 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (TC = 125 °C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 300 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±25 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 4,+ "max": 5,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 37,+ "max": 40,+ "conditions": "VGS = 10 V, ID = 26.5 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 53,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 212,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "ISD = 53 A, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4240,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 205,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 9.5,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Equivalent output capacitance, time related",+ "symbol": "Co(tr)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 373,+ "max": null,+ "conditions": "VDS = 0 to 240 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Equivalent output capacitance, energy related",+ "symbol": "Co(er)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 202,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate input resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.4,+ "max": null,+ "conditions": "f = 1 MHz open drain",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 95,+ "max": null,+ "conditions": "VDD = 240 V, ID = 24 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 23,+ "max": null,+ "conditions": "VDD = 240 V, ID = 24 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 37,+ "max": null,+ "conditions": "VDD = 240 V, ID = 24 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Voltage delay time",+ "symbol": "td(v)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 66,+ "max": null,+ "conditions": "VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Voltage rise time",+ "symbol": "tr(v)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Crossing time off",+ "symbol": "tc(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22.5,+ "max": null,+ "conditions": "VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Current fall time",+ "symbol": "tf(i)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 24,+ "max": null,+ "conditions": "VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 223,+ "max": null,+ "conditions": "ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "μC",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 23,+ "max": null,+ "conditions": "ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time (TJ = 150 °C)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 280,+ "max": null,+ "conditions": "ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge (TJ = 150 °C)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "μC",+ "min": null,+ "typ": 3.9,+ "max": null,+ "conditions": "ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current (TJ = 150 °C)",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 28,+ "max": null,+ "conditions": "ISD = 48 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +678,4 @@ "visibility": { "public": true }-}+}