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sq4410ey-t1-ge3: specified limits as data (metadata.characteristics, 38 rows from the datasheet)

Ray ·7e1534168e ·23d ago ·parent 31e657a
2 files changed +508
README.md+45
@@ -32,6 +32,51 @@ Same part, different packaging or reel option.  - `SQ4410EY-T1_GE3` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS |  |  | 30 | V |  | 1 |+| Gate-source voltage | VGS | -20 |  | 20 | V |  | 1 |+| Continuous drain current | ID |  |  | 15 | A | TC = 25 °C | 1 |+| Continuous drain current | ID |  |  | 9 | A | TC = 125 °C | 1 |+| Continuous source current (diode conduction) | IS |  |  | 4.5 | A |  | 1 |+| Pulsed drain current | IDM |  |  | 60 | A |  | 1 |+| Single pulse avalanche current | IAS |  |  | 38 | A | L = 0.1 mH | 1 |+| Single pulse avalanche energy | EAS |  |  | 72 | mJ |  | 1 |+| Maximum power dissipation | PD |  |  | 5 | W | TC = 25 °C | 1 |+| Maximum power dissipation | PD |  |  | 1.6 | W | TC = 125 °C | 1 |+| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |+| Junction-to-ambient PCB mount | RthJA |  |  | 90 | °C/W | PCB mount | 1 |+| Junction-to-foot (drain) | RthJF |  |  | 30 | °C/W |  | 1 |+| Drain-source breakdown voltage | VDS | 30 |  |  | V | VGS = 0, ID = 250 μA | 2 |+| Gate-source threshold voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-source leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VGS = 0 V, VDS = 30 V | 2 |+| Zero gate voltage drain current | IDSS |  |  | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 |+| Zero gate voltage drain current | IDSS |  |  | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 |+| On-state drain current | ID(on) | 20 |  |  | A | VGS = 10 V, VDS ≥ 5 V | 2 |+| Drain-source on-state resistance | RDS(on) |  | 0.009 | 0.012 | Ω | VGS = 10 V, ID = 10 A | 2 |+| Drain-source on-state resistance | RDS(on) |  |  | 0.018 | Ω | VGS = 10 V, ID = 6 A, TJ = 125 °C | 2 |+| Drain-source on-state resistance | RDS(on) |  |  | 0.021 | Ω | VGS = 10 V, ID = 6 A, TJ = 175 °C | 2 |+| Drain-source on-state resistance | RDS(on) |  | 0.015 | 0.02 | Ω | VGS = 4.5 V, ID = 5 A | 2 |+| Forward transconductance | gfs |  | 34 |  | S | VDS = 15 V, ID = 10 A | 2 |+| Input capacitance | Ciss |  | 1906 | 2385 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |+| Output capacitance | Coss |  | 460 | 575 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |+| Reverse transfer capacitance | Crss |  | 183 | 230 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |+| Total gate charge | Qg |  | 35 | 53 | nC | VGS = 10 V, VDS = 15 V, ID = 10 A | 2 |+| Gate-source charge | Qgs |  | 4.9 |  | nC |  | 2 |+| Gate-drain charge | Qgd |  | 5.4 |  | nC |  | 2 |+| Gate resistance | Rg | 0.5 |  | 2 | Ω | f = 1 MHz | 2 |+| Turn-on delay time | td(on) |  | 11 | 17 | ns | VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise time | tr |  | 7 | 11 | ns | VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-off delay time | td(off) |  | 29 | 44 | ns | VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall time | tf |  | 8 | 12 | ns | VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Pulsed current | ISM |  |  | 60 | A |  | 2 |+| Forward voltage | VSD |  | 0.72 | 1.2 | V | IF = 2.3 A, VGS = 0 | 2 |+ ## CAD (KiCad official)  - Symbol: `SQ4410EY-T1_GE3`
page.json+463
@@ -146,6 +146,469 @@       "Package": "SOIC-8",       "Category": "Transistors/Thyristors",       "Pins": "8"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "941cd7cbfcee6f6f",+      "rows": [+        {+          "name": "Drain-source voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "TC = 25 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 9,+          "conditions": "TC = 125 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous source current (diode conduction)",+          "symbol": "IS",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed drain current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 60,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche current",+          "symbol": "IAS",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 38,+          "conditions": "L = 0.1 mH",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 72,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum power dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "TC = 25 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum power dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 1.6,+          "conditions": "TC = 125 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating junction and storage temperature range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-ambient PCB mount",+          "symbol": "RthJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 90,+          "conditions": "PCB mount",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-foot (drain)",+          "symbol": "RthJF",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "VDS",+          "kind": "electrical",+          "unit": "V",+          "min": 30,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0, ID = 250 μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-source threshold voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 1.5,+          "typ": 2,+          "max": 2.5,+          "conditions": "VDS = VGS, ID = 250 μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-source leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VDS = 0 V, VGS = ± 20 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VGS = 0 V, VDS = 30 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VGS = 0 V, VDS = 30 V, TJ = 125 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 150,+          "conditions": "VGS = 0 V, VDS = 30 V, TJ = 175 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "On-state drain current",+          "symbol": "ID(on)",+          "kind": "electrical",+          "unit": "A",+          "min": 20,+          "typ": null,+          "max": null,+          "conditions": "VGS = 10 V, VDS ≥ 5 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.009,+          "max": 0.012,+          "conditions": "VGS = 10 V, ID = 10 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": null,+          "max": 0.018,+          "conditions": "VGS = 10 V, ID = 6 A, TJ = 125 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": null,+          "max": 0.021,+          "conditions": "VGS = 10 V, ID = 6 A, TJ = 175 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.015,+          "max": 0.02,+          "conditions": "VGS = 4.5 V, ID = 5 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward transconductance",+          "symbol": "gfs",+          "kind": "electrical",+          "unit": "S",+          "min": null,+          "typ": 34,+          "max": null,+          "conditions": "VDS = 15 V, ID = 10 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Input capacitance",+          "symbol": "Ciss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 1906,+          "max": 2385,+          "conditions": "VGS = 0 V, VDS = 25 V, f = 1 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Output capacitance",+          "symbol": "Coss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 460,+          "max": 575,+          "conditions": "VGS = 0 V, VDS = 25 V, f = 1 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse transfer capacitance",+          "symbol": "Crss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 183,+          "max": 230,+          "conditions": "VGS = 0 V, VDS = 25 V, f = 1 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total gate charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 35,+          "max": 53,+          "conditions": "VGS = 10 V, VDS = 15 V, ID = 10 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-source charge",+          "symbol": "Qgs",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 4.9,+          "max": null,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-drain charge",+          "symbol": "Qgd",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 5.4,+          "max": null,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate resistance",+          "symbol": "Rg",+          "kind": "electrical",+          "unit": "Ω",+          "min": 0.5,+          "typ": null,+          "max": 2,+          "conditions": "f = 1 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-on delay time",+          "symbol": "td(on)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 11,+          "max": 17,+          "conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Rise time",+          "symbol": "tr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 7,+          "max": 11,+          "conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-off delay time",+          "symbol": "td(off)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 29,+          "max": 44,+          "conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Fall time",+          "symbol": "tf",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 8,+          "max": 12,+          "conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed current",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 60,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.72,+          "max": 1.2,+          "conditions": "IF = 2.3 A, VGS = 0",+          "source_page": 2,+          "source": "datasheet"+        }+      ]     }   },   "variants": [