component
SK3134K
Public Made by Adomby adom
Shikues MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sk3134k: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ SK3134K from Shikues, in a SOT-723. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 20 | V | | 1 |+| Typical Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | 0.75 | A | note 1: surface mounted on FR4, minimum recommended pad size | 1 |+| Pulsed Drain Current | IDM | | | 1.8 | A | tp=10μs | 1 |+| Power Dissipation | PD | | | 150 | mW | note 1 | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 833 | ℃/W | note 1 | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | ℃ | 1/8" from case for 10 s | 1 |+| Gate-body leakage current | IGSS | -20 | | 20 | µA | VGS =±10V, VDS = 0V | 2 |+| Gate threshold voltage | VGS(th) | 0.35 | 0.54 | 1.1 | V | VDS =VGS, ID =250µA | 2 |+| Drain-source on-resistance | RDS(on) | | 270 | 380 | mΩ | VGS =4.5V, ID =0.65A | 2 |+| Drain-source on-resistance | RDS(on) | | 320 | 450 | mΩ | VGS =2.5V, ID =0.55A | 2 |+| Drain-source on-resistance | RDS(on) | | 390 | 800 | mΩ | VGS =1.8V, ID =0.45A | 2 |+| Input capacitance | Ciss | | 79 | 120 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |+| Output capacitance | Coss | | 13 | 20 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |+| Reverse transfer capacitance | Crss | | 9 | 15 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |+ ## CAD (KiCad official) - Symbol: `SK3134K`
page.json+212−1@@ -147,6 +147,217 @@ "Package": "SOT-723", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "40178f27e17d1e1f",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Typical Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.75,+ "conditions": "note 1: surface mounted on FR4, minimum recommended pad size",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.8,+ "conditions": "tp=10μs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 833,+ "conditions": "note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8\" from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "VGS =±10V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.35,+ "typ": 0.54,+ "max": 1.1,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 270,+ "max": 380,+ "conditions": "VGS =4.5V, ID =0.65A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 320,+ "max": 450,+ "conditions": "VGS =2.5V, ID =0.55A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 390,+ "max": 800,+ "conditions": "VGS =1.8V, ID =0.45A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 79,+ "max": 120,+ "conditions": "VDS =16V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDS =16V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 9,+ "max": 15,+ "conditions": "VDS =16V,VGS =0V,f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +399,4 @@ "visibility": { "public": true }-}+}