component
SI4850EY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si4850ey-t1-ge3: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+470−1
README.md+42@@ -26,6 +26,48 @@ SI4850EY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |+| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 20 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 |+| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| On-State Drain Current | ID(on) | 40 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.018 | 0.022 | Ω | VGS = 10 V, ID = 6.0 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.031 | 0.037 | Ω | VGS = 10 V, ID = 6.0 A, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.039 | 0.047 | Ω | VGS = 10 V, ID = 6.0 A, TJ = 175 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.025 | 0.031 | Ω | VGS = 4.5 V, ID = 5.1 A | 2 |+| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS = 1.7 A, VGS = 0 V | 2 |+| Total Gate Charge | Qg | | 18 | 27 | nC | VDS = 30 V, VGS = 10 V, ID = 6.0 A | 2 |+| Gate Resistance | Rg | 0.5 | 1.4 | 2.4 | Ω | VGS = 0.1 V, f = 5 MHz | 2 |+| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |+| Rise Time | tr | | 10 | 20 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 25 | 50 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |+| Fall Time | tf | | 12 | 24 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |+| Source-Drain Reverse Recovery Time | trr | | 50 | 80 | ns | IF = 1.7 A, dI/dt = 100 A/µs | 2 |+| Drain-Source Voltage | VDS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (TJ = 175 °C) | ID | | | 8.5 | A | TA = 25 °C, 10 s | 1 |+| Continuous Drain Current (TJ = 175 °C) | ID | | | 6 | A | TA = 25 °C, steady state | 1 |+| Continuous Drain Current (TJ = 175 °C) | ID | | | 7.1 | A | TA = 70 °C, 10 s | 1 |+| Continuous Drain Current (TJ = 175 °C) | ID | | | 5 | A | TA = 70 °C, steady state | 1 |+| Pulsed Drain Current | IDM | | | 40 | A | | 1 |+| Avalanche Current | IAS | | | 15 | A | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 11 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 3.3 | W | TA = 25 °C, 10 s | 1 |+| Maximum Power Dissipation | PD | | | 1.7 | W | TA = 25 °C, steady state | 1 |+| Maximum Power Dissipation | PD | | | 2.3 | W | TA = 70 °C, 10 s | 1 |+| Maximum Power Dissipation | PD | | | 1.2 | W | TA = 70 °C, steady state | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 36 | 45 | °C/W | t ≤ 10 s | 1 |+| Maximum Junction-to-Ambient | RthJA | | 75 | 90 | °C/W | Steady State | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 17 | 20 | °C/W | Steady State | 1 |+ ## CAD (KiCad official) - Symbol: `SI4850EY-T1-GE3`
page.json+428−1@@ -180,6 +180,433 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "954b598cb6c457eb",+ "rows": [+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 3,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 60 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 60 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.018,+ "max": 0.022,+ "conditions": "VGS = 10 V, ID = 6.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.031,+ "max": 0.037,+ "conditions": "VGS = 10 V, ID = 6.0 A, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.039,+ "max": 0.047,+ "conditions": "VGS = 10 V, ID = 6.0 A, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.025,+ "max": 0.031,+ "conditions": "VGS = 4.5 V, ID = 5.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 1.7 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 18,+ "max": 27,+ "conditions": "VDS = 30 V, VGS = 10 V, ID = 6.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.5,+ "typ": 1.4,+ "max": 2.4,+ "conditions": "VGS = 0.1 V, f = 5 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 25,+ "max": 50,+ "conditions": "VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 24,+ "conditions": "VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": 80,+ "conditions": "IF = 1.7 A, dI/dt = 100 A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 175 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8.5,+ "conditions": "TA = 25 °C, 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 175 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 175 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.1,+ "conditions": "TA = 70 °C, 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 175 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TA = 70 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.3,+ "conditions": "TA = 25 °C, 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.7,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.3,+ "conditions": "TA = 70 °C, 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "TA = 70 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 36,+ "max": 45,+ "conditions": "t ≤ 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": 90,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 17,+ "max": 20,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +648,4 @@ "visibility": { "public": true }-}+}