component
SI4134DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
si4134dy-t1-ge3: specified limits as data (metadata.characteristics, 42 rows from the datasheet)
2 files changed
+561−1
README.md+49@@ -26,6 +26,55 @@ SI4134DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 14 | A | TJ = 150 °C; TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | 11.2 | A | TJ = 150 °C; TC = 70 °C | 1 |+| Continuous Drain Current | ID | | | 9.9 | A | TA = 25 °C (notes b, c) | 1 |+| Continuous Drain Current | ID | | | 7.9 | A | TA = 70 °C (notes b, c) | 1 |+| Pulsed Drain Current | IDM | | | 50 | A | t = 300 μs | 1 |+| Continuous Source-Drain Diode Current | IS | | | 4.1 | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | | | 2 | A | TA = 25 °C (notes b, c) | 1 |+| Single Pulse Avalanche Current | IAS | | | 15 | A | L = 0.1 mH | 1 |+| Avalanche Energy | EAS | | | 11.25 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 5 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 3.2 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TA = 25 °C (notes b, c) | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TA = 70 °C (notes b, c) | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 38 | 50 | °C/W | t ≤ 10 s (notes b, d) | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 20 | 25 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 30 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.0115 | 0.014 | Ω | VGS = 10 V, ID = 10 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.0145 | 0.0175 | Ω | VGS = 4.5 V, ID = 7 A | 2 |+| Total Gate Charge | Qg | | 15.4 | 23 | nC | VDS = 15 V, VGS = 10 V, ID = 10 A | 2 |+| Total Gate Charge | Qg | | 7.3 | 11 | nC | VDS = 15 V, VGS = 4.5 V, ID = 10 A | 2 |+| Gate Resistance | Rg | 0.2 | 0.8 | 1.6 | Ω | f = 1 MHz | 2 |+| Turn-On Delay Time | td(on) | | 15 | 30 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 12 | 24 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 13 | 26 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 10 | 20 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Turn-On Delay Time | td(on) | | 9 | 18 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 9 | 18 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 14 | 28 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 8 | 16 | ns | VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Continuous Source-Drain Diode Current | IS | | | 4.2 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | 50 | A | | 2 |+| Body Diode Voltage | VSD | | 0.78 | 1.2 | V | IS = 3 A | 2 |+| Body Diode Reverse Recovery Time | trr | | 17 | 34 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 9.5 | 19 | nC | | 2 |+ ## CAD (KiCad official) - Symbol: `SI4134DY-T1-GE3`
page.json+512−1@@ -180,6 +180,517 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "99206216540b625b",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 14,+ "conditions": "TJ = 150 °C; TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11.2,+ "conditions": "TJ = 150 °C; TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9.9,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.9,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "t = 300 μs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.1,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 11.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.2,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 38,+ "max": 50,+ "conditions": "t ≤ 10 s (notes b, d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 20,+ "max": 25,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.8,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 30 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0115,+ "max": 0.014,+ "conditions": "VGS = 10 V, ID = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0145,+ "max": 0.0175,+ "conditions": "VGS = 4.5 V, ID = 7 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15.4,+ "max": 23,+ "conditions": "VDS = 15 V, VGS = 10 V, ID = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7.3,+ "max": 11,+ "conditions": "VDS = 15 V, VGS = 4.5 V, ID = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.2,+ "typ": 0.8,+ "max": 1.6,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": 30,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 24,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 26,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 14,+ "max": 28,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": 16,+ "conditions": "VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.2,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.78,+ "max": 1.2,+ "conditions": "IS = 3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 17,+ "max": 34,+ "conditions": "IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9.5,+ "max": 19,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +732,4 @@ "visibility": { "public": true }-}+}