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si3433cdv-t1-ge3-vb: factory component page (tier=lcsc)

Ray ·b4ee77e3a0 ·1mo ago ·parent 4155802
1 file changed +110−8
page.json+110−8
@@ -1,13 +1,120 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "si3433cdv-t1-ge3-vb",+  "title": "SI3433CDV-T1-GE3-VB",+  "brief": "VBsemi Elec MOSFETs, TSOP-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "VBsemi Elec MOSFETs, TSOP-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "si3433cdv-t1-ge3-vb"   ],+  "component": {+    "mpn": "SI3433CDV-T1-GE3-VB",+    "manufacturer": "VBsemi Elec",+    "package": "TSOP-6",+    "pin_count": 6,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603115601578127360",+    "parts": {+      "symbol": "si3433cdv-t1-ge3-vb.kicad_sym",+      "footprint": "si3433cdv-t1-ge3-vb.kicad_mod",+      "model_3d": "si3433cdv-t1-ge3-vb.glb",+      "model_3d_step": "si3433cdv-t1-ge3-vb.step",+      "lbr": "si3433cdv-t1-ge3-vb.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "D",+        "type": "passive",+        "description": "Drain. Ganged with pins 2, 5, 6 for current handling and thermal conduction (bonded to package foot). VDS(max) = -30 V; ID(cont) = -4.8 A at TC = 25 \u00b0C; RDS(on) = 0.049 \u03a9 at VGS = -10 V."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain (ganged with pins 1, 5, 6). See pin 1."+      },+      {+        "number": "3",+        "name": "G",+        "type": "input",+        "description": "Gate. VGS(max) = \u00b120 V; VGS(th) = -0.5 V to -2.0 V at VDS = VGS, ID = -250 \u00b5A. Gate resistance Rg \u2248 7 \u03a9; Ciss \u2248 450 pF."+      },+      {+        "number": "4",+        "name": "S",+        "type": "passive",+        "description": "Source. Reference terminal for VGS and body-diode anode of the P-channel MOSFET. Continuous source-drain diode current IS = -2.5 A at TC = 25 \u00b0C; VSD \u2248 -0.8 to -1.2 V at IS = -3.3 A."+      },+      {+        "number": "5",+        "name": "D",+        "type": "passive",+        "description": "Drain (ganged with pins 1, 2, 6). See pin 1."+      },+      {+        "number": "6",+        "name": "D",+        "type": "passive",+        "description": "Drain (ganged with pins 1, 2, 5). See pin 1."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603115601578127360",+        "pages": null,+        "sha256": "654a91574e71f23d",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 6,+        "described": 6,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "VBsemi Elec",+      "Package": "TSOP-6",+      "Category": "Transistors/Thyristors",+      "Pins": "6"+    }+  },+  "variants": [+    {+      "mpn": "SI3433CDV-T1-GE3-VB",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "si3433cdv-t1-ge3-vb"+  ],+  "discovery_pitch": "SI3433CDV-T1-GE3-VB (VBsemi Elec) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +132,5 @@     "docs/si3433cdv-t1-ge3-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file