component
Si2302CDS-T1-GE3-ES
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2302cds-t1-ge3-es: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ Si2302CDS-T1-GE3-ES from ElecSuper, in a SOT-23. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | BVDSS | | | 20 | V | | 2 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 2 |+| Continuous Drain Current | ID | | | 3.3 | A | TA=25℃ | 2 |+| Continuous Drain Current | ID | | | 2.1 | A | TA=100℃ | 2 |+| Maximum Power Dissipation | PD | | | 0.9 | mW | | 2 |+| Pulsed Drain Current | IDM | | | 13.2 | A | | 2 |+| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |+| Lead Temperature | TL | | | 260 | °C | | 2 |+| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |+| Junction-to-Ambient Thermal Resistance | RθJA | | 138 | | °C/W | Single Operation | 2 |+| Gate Threshold Voltage | VGS(TH) | 0.4 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 3 |+| Gate-to-source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 3 |+| Drain-to-source On-resistance | RDS(on) | | 45 | 55 | mΩ | VGS=4.5V, ID=3A | 3 |+| Drain-to-source On-resistance | RDS(on) | | 62 | 85 | mΩ | VGS=2.5V, ID=2A | 3 |+| Drain-to-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS=0V, ID=250uA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=20V, VGS=0V | 3 |+| Forward Voltage | VSD | | | 1.5 | V | VGS=0V, IS=3A | 3 |+ ## CAD (KiCad official) - Symbol: `Si2302CDS-T1-GE3-ES`
page.json+212−1@@ -147,6 +147,217 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "7a791fb70be218e8",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "BVDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.3,+ "conditions": "TA=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "TA=100℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 13.2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 138,+ "max": null,+ "conditions": "Single Operation",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.4,+ "typ": 0.7,+ "max": 1,+ "conditions": "VGS=VDS, ID=250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±12V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source On-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 45,+ "max": 55,+ "conditions": "VGS=4.5V, ID=3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source On-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 62,+ "max": 85,+ "conditions": "VGS=2.5V, ID=2A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=20V, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "VGS=0V, IS=3A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +399,4 @@ "visibility": { "public": true }-}+}