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Set visibility: public

Ray ·5f2901e6e2 ·28d ago ·parent 03cbe96
1 file changed +8−5
page.json+8−5
@@ -38,13 +38,13 @@         "number": "2",         "name": "G1",         "type": "input",-        "description": "Gate of P-channel MOSFET #1. VGS max \u00b18 V; VGS(th) typ. -0.4 to -1.0 V. Drive negative with respect to S1 to turn the device on."+        "description": "Gate of P-channel MOSFET #1. VGS max ±8 V; VGS(th) typ. -0.4 to -1.0 V. Drive negative with respect to S1 to turn the device on."       },       {         "number": "3",         "name": "D2",         "type": "passive",-        "description": "Drain of P-channel MOSFET #2. VDS max -20 V; RDS(on) 0.490 \u03a9 max at VGS = -4.5 V. Continuous ID up to -1.3 A (package-limited)."+        "description": "Drain of P-channel MOSFET #2. VDS max -20 V; RDS(on) 0.490 Ω max at VGS = -4.5 V. Continuous ID up to -1.3 A (package-limited)."       },       {         "number": "4",@@ -56,13 +56,13 @@         "number": "5",         "name": "G2",         "type": "input",-        "description": "Gate of P-channel MOSFET #2. VGS max \u00b18 V; VGS(th) typ. -0.4 to -1.0 V. Drive negative with respect to S2 to turn the device on."+        "description": "Gate of P-channel MOSFET #2. VGS max ±8 V; VGS(th) typ. -0.4 to -1.0 V. Drive negative with respect to S2 to turn the device on."       },       {         "number": "6",         "name": "D1",         "type": "passive",-        "description": "Drain of P-channel MOSFET #1. VDS max -20 V; RDS(on) 0.490 \u03a9 max at VGS = -4.5 V. Continuous ID up to -1.3 A (package-limited)."+        "description": "Drain of P-channel MOSFET #1. VDS max -20 V; RDS(on) 0.490 Ω max at VGS = -4.5 V. Continuous ID up to -1.3 A (package-limited)."       }     ],     "provenance": {@@ -136,5 +136,8 @@     "docs/si1967dh-t1-e3-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file