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SI1967DH-T1-E3
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Vishay Intertech MOSFETs, SOT-363. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+114−8@@ -1,13 +1,124 @@ {+ "schema_version": 1,+ "type": "component", "slug": "si1967dh-t1-e3",+ "title": "SI1967DH-T1-E3",+ "brief": "Vishay Intertech MOSFETs, SOT-363. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Vishay Intertech MOSFETs, SOT-363. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "si1967dh-t1-e3" ],+ "component": {+ "mpn": "SI1967DH-T1-E3",+ "manufacturer": "Vishay Intertech",+ "package": "SOT-363",+ "pin_count": 6,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916891516096512",+ "parts": {+ "symbol": "si1967dh-t1-e3.kicad_sym",+ "footprint": "si1967dh-t1-e3.kicad_mod",+ "model_3d": "si1967dh-t1-e3.glb",+ "model_3d_step": "si1967dh-t1-e3.step",+ "lbr": "si1967dh-t1-e3.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "S1",+ "type": "passive",+ "description": "Source of P-channel MOSFET #1. Connect to the higher-potential rail in a high-side load switch configuration (source at VIN)."+ },+ {+ "number": "2",+ "name": "G1",+ "type": "input",+ "description": "Gate of P-channel MOSFET #1. VGS max \u00b18 V; VGS(th) typ. -0.4 to -1.0 V. Drive negative with respect to S1 to turn the device on."+ },+ {+ "number": "3",+ "name": "D2",+ "type": "passive",+ "description": "Drain of P-channel MOSFET #2. VDS max -20 V; RDS(on) 0.490 \u03a9 max at VGS = -4.5 V. Continuous ID up to -1.3 A (package-limited)."+ },+ {+ "number": "4",+ "name": "S2",+ "type": "passive",+ "description": "Source of P-channel MOSFET #2. Connect to the higher-potential rail in a high-side load switch configuration (source at VIN)."+ },+ {+ "number": "5",+ "name": "G2",+ "type": "input",+ "description": "Gate of P-channel MOSFET #2. VGS max \u00b18 V; VGS(th) typ. -0.4 to -1.0 V. Drive negative with respect to S2 to turn the device on."+ },+ {+ "number": "6",+ "name": "D1",+ "type": "passive",+ "description": "Drain of P-channel MOSFET #1. VDS max -20 V; RDS(on) 0.490 \u03a9 max at VGS = -4.5 V. Continuous ID up to -1.3 A (package-limited)."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916891516096512",+ "pages": 7,+ "sha256": "5ed6711181d71b33",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 6,+ "described": 6,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "Vishay Intertech",+ "Package": "SOT-363",+ "Category": "Transistors/Thyristors",+ "Pins": "6"+ }+ },+ "variants": [+ {+ "mpn": "Si1967DH-T1-E3",+ "kind": "packaging"+ },+ {+ "mpn": "Si1967DH-T1-GE3",+ "kind": "unknown"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "si1967dh-t1-e3"+ ],+ "discovery_pitch": "SI1967DH-T1-E3 (Vishay Intertech) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +136,5 @@ "docs/si1967dh-t1-e3-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }