component
SI1902CDL-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si1902cdl-t1-ge3: specified limits as data (metadata.characteristics, 50 rows from the datasheet)
2 files changed
+665−1
README.md+57@@ -24,6 +24,63 @@ SI1902CDL-T1-GE3 from Vishay Intertech, in a SC-70-6. Pinout and pin description | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 20 | V | | 1 |+| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous drain current | ID | | | 1.1 | A | TJ = 150 °C, TC = 25 °C | 1 |+| Continuous drain current | ID | | | 0.9 | A | TJ = 150 °C, TC = 70 °C | 1 |+| Continuous drain current | ID | | | 1 | A | TJ = 150 °C, TA = 25 °C | 1 |+| Continuous drain current | ID | | | 0.8 | A | TJ = 150 °C, TA = 70 °C | 1 |+| Pulsed drain current | IDM | | | 2 | A | t = 300 μs | 1 |+| Continuous source-drain diode current | IS | | | 0.35 | A | TC = 25 °C | 1 |+| Continuous source-drain diode current | IS | | | 0.25 | A | TA = 25 °C | 1 |+| Maximum power dissipation | PD | | | 0.42 | W | TC = 25 °C | 1 |+| Maximum power dissipation | PD | | | 0.27 | W | TC = 70 °C | 1 |+| Maximum power dissipation | PD | | | 0.3 | W | TA = 25 °C | 1 |+| Maximum power dissipation | PD | | | 0.23 | W | TA = 70 °C | 1 |+| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum junction-to-ambient | RthJA | | 290 | 350 | °C/W | t ≤ 5 s | 1 |+| Maximum junction-to-foot (drain) | RthJF | | 250 | 300 | °C/W | Steady state | 1 |+| Drain-source breakdown voltage | VDS | 20 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Gate-source threshold voltage | VGS(th) | 0.6 | | 1.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 20 V, VGS = 0 V | 2 |+| Zero gate voltage drain current | IDSS | | | 10 | μA | VDS = 20 V, VGS = 0 V, TJ = 85 °C | 2 |+| On-state drain current | ID(on) | 2 | | | A | VDS ≥ 5 V, VGS = 4.5 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.195 | 0.235 | Ω | VGS = 4.5 V, ID = 1 A | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.255 | 0.306 | Ω | VGS = 2.5 V, ID = 0.3 A | 2 |+| Total gate charge | Qg | | 2 | 3 | nC | VDS = 10 V, VGS = 10 V, ID = 1 A | 2 |+| Total gate charge | Qg | | 0.9 | 1.4 | nC | VDS = 10 V, VGS = 4.5 V, ID = 1 A | 2 |+| Gate resistance | Rg | 2.4 | 12 | 24 | Ω | f = 1 MHz | 2 |+| Turn-on delay time | td(on) | | 4 | 8 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise time | tr | | 13 | 20 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-off delay time | td(off) | | 11 | 20 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall time | tf | | 9 | 18 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-on delay time | td(on) | | 6 | 12 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Rise time | tr | | 16 | 24 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Turn-off delay time | td(off) | | 13 | 20 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Fall time | tf | | 10 | 20 | ns | VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Continuous source-drain diode current | IS | | | 0.35 | A | TC = 25 °C | 2 |+| Pulse diode forward current | ISM | | | 2 | A | | 2 |+| Body diode voltage | VSD | | 0.8 | 1.2 | V | IS = 0.8 A | 2 |+| Body diode reverse recovery time | trr | | 2 | 4 | nC | IF = 0.8 A, di/dt = 100 A/μs | 2 |+| Body diode reverse recovery charge | Qrr | | 8 | 16 | nC | IF = 0.8 A, di/dt = 100 A/μs | 2 |+| VDS temperature coefficient | VDS/TJ | | 25 | | mV/°C | ID = 250 μA | 2 |+| VGS(th) temperature coefficient | VGS(th)/TJ | | -2.6 | | mV/°C | | 2 |+| Forward transconductance | gfs | | 3 | | ms | VDS = 10 V, ID = 1 A | 2 |+| Input capacitance | Ciss | | 62 | | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |+| Output capacitance | Coss | | 20 | | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |+| Reverse transfer capacitance | Crss | | 7 | | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |+| Gate-source charge | Qgs | | 0.2 | | nC | | 2 |+| Gate-drain charge | Qgd | | 0.2 | | nC | | 2 |+| Reverse recovery fall time | ta | | 5 | | ns | | 2 |+| Reverse recovery rise time | tb | | 3 | | ns | | 2 |+ ## CAD (KiCad official) - Symbol: `SI1902CDL-T1-GE3`
page.json+608−1@@ -168,6 +168,613 @@ "Package": "SC-70-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "2c9a5d8705ab96d6",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "TJ = 150 °C, TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "TJ = 150 °C, TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "TJ = 150 °C, TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TJ = 150 °C, TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "t = 300 μs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.35,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.42,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.27,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.23,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 290,+ "max": 350,+ "conditions": "t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-foot (drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 250,+ "max": 300,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": null,+ "max": 1.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 12 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 20 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 20 V, VGS = 0 V, TJ = 85 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state drain current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 2,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.195,+ "max": 0.235,+ "conditions": "VGS = 4.5 V, ID = 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.255,+ "max": 0.306,+ "conditions": "VGS = 2.5 V, ID = 0.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2,+ "max": 3,+ "conditions": "VDS = 10 V, VGS = 10 V, ID = 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.9,+ "max": 1.4,+ "conditions": "VDS = 10 V, VGS = 4.5 V, ID = 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 2.4,+ "typ": 12,+ "max": 24,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 4,+ "max": 8,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": 12,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.35,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse diode forward current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 0.8 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2,+ "max": 4,+ "conditions": "IF = 0.8 A, di/dt = 100 A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8,+ "max": 16,+ "conditions": "IF = 0.8 A, di/dt = 100 A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VDS temperature coefficient",+ "symbol": "VDS/TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 25,+ "max": null,+ "conditions": "ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VGS(th) temperature coefficient",+ "symbol": "VGS(th)/TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": -2.6,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "ms",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "VDS = 10 V, ID = 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 62,+ "max": null,+ "conditions": "VDS = 10 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "VDS = 10 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "VDS = 10 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.2,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.2,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery fall time",+ "symbol": "ta",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery rise time",+ "symbol": "tb",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -209,4 +816,4 @@ "visibility": { "public": true }-}+}