component
SE2N65
Public Made by Adomby adom
SINO IC MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated MOSFET control terminal. VGS(th) = 2.5-4.5 V; absolute maximum VGS = \u00b130 V; gate-body leakage IGSS = 100 nA max @ VGS = 30 V. Drive with VGS = 10 V for RDS(on) = 3.5 \u03a9 typ."+ "description": "Gate. Insulated MOSFET control terminal. VGS(th) = 2.5-4.5 V; absolute maximum VGS = ±30 V; gate-body leakage IGSS = 100 nA max @ VGS = 30 V. Drive with VGS = 10 V for RDS(on) = 3.5 Ω typ." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. Power terminal, typically connected to the higher potential in an N-channel high-side/low-side switching topology. BVDSS = 650 V; IDSS = 1 \u00b5A max @ VDS = 650 V. Continuous ID = 2 A, pulsed 8 A. Electrically common to the mounting tab."+ "description": "Drain. Power terminal, typically connected to the higher potential in an N-channel high-side/low-side switching topology. BVDSS = 650 V; IDSS = 1 µA max @ VDS = 650 V. Continuous ID = 2 A, pulsed 8 A. Electrically common to the mounting tab." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Power/return terminal and reference for VGS. Body diode: VSD = 1.4 V max @ IS = 2 A, trr = 300 ns typ, QRR = 2.2 \u00b5C."+ "description": "Source. Power/return terminal and reference for VGS. Body diode: VSD = 1.4 V max @ IS = 2 A, trr = 300 ns typ, QRR = 2.2 µC." } ], "provenance": {@@ -109,5 +109,8 @@ "docs/se2n65-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }