component
S1815
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
s1815: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ S1815 from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the ma | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Base Voltage | VCBO | | | 60 | V | | 1 |+| Collector-Emitter Voltage | VCEO | | | 50 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | 5 | V | | 1 |+| Collector Current | IC | | | 150 | mA | | 1 |+| Power dissipation | PC | | | 200 | mW | Ta=25℃ | 1 |+| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ℃ | | 1 |+| Collector-Base Breakdown Voltage | BVCBO | 60 | | | V | IC=100uA, IE=0 | 2 |+| Collector-Emitter Breakdown Voltage | BVCEO | 50 | | | V | IC=1mA, IB=0 | 2 |+| Emitter-Base Breakdown Voltage | BVEBO | 5 | | | V | IE=100uA, IC=0 | 2 |+| Collector-Base Leakage Current | ICBO | | | 100 | nA | VCB=60V, IE=0 | 2 |+| Emitter-Base Leakage Current | IEBO | | | 100 | nA | VEB=5V, IC=0 | 2 |+| DC Current Gain | HFE | 120 | | 400 | | VCE=6V, IC=2mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.25 | V | IC=100mA, IB=10mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 1 | V | IC=100mA, IB=10mA | 2 |+| Transition Frequency | fT | 80 | | | MHZ | VCE=10V, IC=1mA | 2 |+| Thermal Resistance Junction-Ambient | RΘJA | | 625 | | ℃/W | | 1 |+ ## CAD (KiCad official) - Symbol: `S1815`
page.json+200−1@@ -149,6 +149,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "8e4668f421201ae8",+ "rows": [+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PC",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "BVCBO",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "IC=100uA, IE=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "BVCEO",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC=1mA, IB=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "BVEBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE=100uA, IC=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Leakage Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB=60V, IE=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Leakage Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VEB=5V, IC=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "HFE",+ "kind": "electrical",+ "unit": "",+ "min": 120,+ "typ": null,+ "max": 400,+ "conditions": "VCE=6V, IC=2mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "IC=100mA, IB=10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "IC=100mA, IB=10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transition Frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHZ",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VCE=10V, IC=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Ambient",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 625,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +389,4 @@ "visibility": { "public": true }-}+}