component
RC60P04Y
Public Made by Adomby adom
RealChip MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
rc60p04y: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ RC60P04Y from RealChip, in a SOT-23L. Pinout and pin descriptions extracted from | Category | Triode/MOS Tube/Transistor | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -60 | | | V | TA = 25 C | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 C | 1 |+| Drain Current-Continuous | ID | -4 | | | A | TA = 25 C | 1 |+| Drain Current-Pulsed | IDM | -17.2 | | | A | Repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TA = 25 C | 1 |+| Operating and Store Temperature Range | TJ,Tstg | -55 | | 150 | C | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 42 | C/W | Surface mounted on FR4 board, t < 10 sec | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS = 0V, ID = -250µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -60V, VGS = 0V | 2 |+| Gate Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS = 20V, VDS = 0V | 2 |+| Gate Body Leakage Current, Reverse | IGSSR | | | -100 | nA | VGS = -20V, VDS = 0V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VGS = VDS, ID = -250µA | 2 |+| Static Drain-Source On-Resistance | RDS(on) | | | 120 | mΩ | VGS = -10V, ID = -4A | 2 |+| Static Drain-Source On-Resistance | RDS(on) | | | 150 | mΩ | VGS = -4.5V, ID = -2A | 2 |+| Drain-Source Diode Forward Current | IS | | | -2.5 | A | | 2 |+| Drain-Source Diode Forward Voltage | VSD | | | -1.2 | V | VGS = 0V, IS = -1.3A | 2 |+ ## CAD (KiCad official) - Symbol: `RC60P04Y`
page.json+200−1@@ -147,6 +147,205 @@ "Package": "SOT-23L", "Category": "Triode/MOS Tube/Transistor", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "bf13957d9f0829f9",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TA = 25 C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -17.2,+ "typ": null,+ "max": null,+ "conditions": "Repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TA = 25 C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Store Temperature Range",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": null,+ "max": 42,+ "conditions": "Surface mounted on FR4 board, t < 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = -250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -60V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Body Leakage Current, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Body Leakage Current, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -3,+ "conditions": "VGS = VDS, ID = -250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VGS = -10V, ID = -4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = -4.5V, ID = -2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS = 0V, IS = -1.3A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +387,4 @@ "visibility": { "public": true }-}+}