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pjm80n68te: factory component page (tier=lcsc)

Ray ·c9f0630675 ·28d ago ·parent 6001708
1 file changed +92−8
page.json+92−8
@@ -1,13 +1,102 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "pjm80n68te",+  "title": "PJM80N68TE",+  "brief": "PJSEMI MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "PJSEMI MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "pjm80n68te"   ],+  "component": {+    "mpn": "PJM80N68TE",+    "manufacturer": "PJSEMI",+    "package": "TO-252",+    "pin_count": 3,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603548503264686080",+    "parts": {+      "symbol": "pjm80n68te.kicad_sym",+      "footprint": "pjm80n68te.kicad_mod",+      "model_3d": "pjm80n68te.glb",+      "model_3d_step": "pjm80n68te.step",+      "lbr": "pjm80n68te.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "Gate",+        "type": "input",+        "description": "Gate terminal of the N-channel enhancement mode MOSFET. Controls the drain-source conduction; VGS(th) typ 2.8V (min 2V, max 4V). Absolute maximum VGS is \u00b120V."+      },+      {+        "number": "2",+        "name": "Drain",+        "type": "passive",+        "description": "Drain terminal of the N-channel MOSFET. Rated VDS=68V, ID=80A continuous (IDM=320A pulsed). RDS(on) typ 7.5m\u03a9 / max 8.6m\u03a9 @VGS=10V, ID=30A. Also electrically connected to the TO-252 tab."+      },+      {+        "number": "3",+        "name": "Source",+        "type": "passive",+        "description": "Source terminal of the N-channel MOSFET. Body-diode forward voltage VSD max 1.2V @IS=30A, VGS=0V; continuous IS up to 80A."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603548503264686080",+        "pages": null,+        "sha256": "9ed7f9abaeec235a",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "PJSEMI",+      "Package": "TO-252",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    }+  },+  "variants": [+    {+      "mpn": "PJM80N68TE",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "pjm80n68te"+  ],+  "discovery_pitch": "PJM80N68TE (PJSEMI) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +114,5 @@     "docs/pjm80n68te-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file