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nvd5414nt4g-vb: factory component page (tier=lcsc)

Ray ·8b6a64f4aa ·2mo ago ·parent 7ca6e1f
1 file changed +98−8
page.json+98−8
@@ -1,13 +1,108 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "nvd5414nt4g-vb",+  "title": "NVD5414NT4G-VB",+  "brief": "VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "nvd5414nt4g-vb"   ],+  "component": {+    "mpn": "NVD5414NT4G-VB",+    "manufacturer": "VBsemi Elec",+    "package": "TO-252",+    "pin_count": 4,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603134949008687104",+    "parts": {+      "symbol": "nvd5414nt4g-vb.kicad_sym",+      "footprint": "nvd5414nt4g-vb.kicad_mod",+      "model_3d": "nvd5414nt4g-vb.glb",+      "model_3d_step": "nvd5414nt4g-vb.step",+      "lbr": "nvd5414nt4g-vb.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Insulated gate input controlling the MOSFET channel. VGS absolute maximum \u00b120 V; typical gate threshold VGS(th) = 2.0 V (1.0-3.0 V). Total gate charge Qg \u2248 11 nC at VGS = 10 V."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain. High-side power terminal of the N-channel MOSFET. Rated V(BR)DSS = 60 V, continuous ID = 45 A (TC = 25 \u00b0C). Electrically connected to the exposed tab (pin 4) of the TO-252 package."+      },+      {+        "number": "3",+        "name": "S",+        "type": "passive",+        "description": "Source. Low-side power terminal of the N-channel MOSFET. Continuous source (body-diode) current IS = 23 A; diode forward voltage VSD \u2248 1.0 V typical at IF = 15 A."+      },+      {+        "number": "4",+        "name": "D (TAB)",+        "type": "passive",+        "description": "Drain tab. Exposed metal pad on the back of the TO-252 package used for PCB heat-sinking; internally connected to the Drain (pin 2). Solder to a copper pour for thermal dissipation (RthJC = 3.2 \u00b0C/W typical)."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603134949008687104",+        "pages": null,+        "sha256": "619572703e282dca",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 4,+        "described": 4,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "VBsemi Elec",+      "Package": "TO-252",+      "Category": "Transistors/Thyristors",+      "Pins": "4"+    }+  },+  "variants": [+    {+      "mpn": "NVD5414NT4G-VB",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "nvd5414nt4g-vb"+  ],+  "discovery_pitch": "NVD5414NT4G-VB (VBsemi Elec) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +120,5 @@     "docs/nvd5414nt4g-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file