component
NTMFS4C290N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,7 +32,7 @@ "number": "1", "name": "S", "type": "passive",- "description": "Source terminal of the N-Channel MOSFET. Pins 1, 2, 3 are internally connected to the source and should be tied together on the PCB to carry the drain current (rated ID=80A @ TC=25\u00b0C)."+ "description": "Source terminal of the N-Channel MOSFET. Pins 1, 2, 3 are internally connected to the source and should be tied together on the PCB to carry the drain current (rated ID=80A @ TC=25°C)." }, { "number": "2",@@ -50,13 +50,13 @@ "number": "4", "name": "G", "type": "input",- "description": "Gate terminal of the N-Channel MOSFET. Gate threshold VGS(TH)=1.0-2.5V (typ 1.7V); absolute maximum VGS=\u00b120V. Drive with VGS\u22654.5V for RDS(ON) \u2264 8 m\u03a9, or VGS=10V for RDS(ON) \u2264 6 m\u03a9. Total gate charge Qg\u224838 nC."+ "description": "Gate terminal of the N-Channel MOSFET. Gate threshold VGS(TH)=1.0-2.5V (typ 1.7V); absolute maximum VGS=±20V. Drive with VGS≥4.5V for RDS(ON) ≤ 8 mΩ, or VGS=10V for RDS(ON) ≤ 6 mΩ. Total gate charge Qg≈38 nC." }, { "number": "5", "name": "D", "type": "passive",- "description": "Drain terminal of the N-Channel MOSFET. Pins 5, 6, 7, 8 (and the exposed thermal pad) are internally connected to the drain; all must be tied together on the PCB and copper-poured for thermal dissipation (R\u03b8JA=30 \u00b0C/W). Rated V(BR)DSS \u2265 30V."+ "description": "Drain terminal of the N-Channel MOSFET. Pins 5, 6, 7, 8 (and the exposed thermal pad) are internally connected to the drain; all must be tied together on the PCB and copper-poured for thermal dissipation (RθJA=30 °C/W). Rated V(BR)DSS ≥ 30V." }, { "number": "6",@@ -144,5 +144,8 @@ "docs/ntmfs4c290n-hxy-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }