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NTD4969NT4G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated gate control terminal of the N-channel MOSFET. Absolute maximum VGS = \u00b120 V; typical gate threshold VGS(th) = 1.0-2.5 V at ID = 250 \u00b5A."+ "description": "Gate. Insulated gate control terminal of the N-channel MOSFET. Absolute maximum VGS = ±20 V; typical gate threshold VGS(th) = 1.0-2.5 V at ID = 250 µA." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. Power terminal of the N-channel MOSFET; also electrically connected to the tab/heat slug of the TO-252 package. VDS(max) = 30 V, continuous ID = 80 A at TC = 25 \u00b0C."+ "description": "Drain. Power terminal of the N-channel MOSFET; also electrically connected to the tab/heat slug of the TO-252 package. VDS(max) = 30 V, continuous ID = 80 A at TC = 25 °C." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Return power terminal of the N-channel MOSFET. Internal body diode is present between source (anode) and drain (cathode); VSD \u2248 0.8 V typ at IS = 22 A."+ "description": "Source. Return power terminal of the N-channel MOSFET. Internal body diode is present between source (anode) and drain (cathode); VSD ≈ 0.8 V typ at IS = 22 A." }, { "number": "4",@@ -120,5 +120,8 @@ "docs/ntd4969nt4g-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }