component
NSS60600MZ4T3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-223. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -32,25 +32,25 @@ "number": "1", "name": "B", "type": "input",- "description": "Base of PNP transistor. Drive with negative current (relative to emitter) to turn the device on; VBE(sat) \u2264 \u22121.0 V at IC = \u22121.0 A, IB = \u22120.1 A. VEBO absolute max \u22126.0 V."+ "description": "Base of PNP transistor. Drive with negative current (relative to emitter) to turn the device on; VBE(sat) ≤ −1.0 V at IC = −1.0 A, IB = −0.1 A. VEBO absolute max −6.0 V." }, { "number": "2", "name": "C", "type": "passive",- "description": "Collector of PNP transistor (also tied to pin 4 tab internally). VCEO max \u221260 V, VCBO max \u2212100 V, IC continuous \u22126.0 A, ICM peak \u221212.0 A."+ "description": "Collector of PNP transistor (also tied to pin 4 tab internally). VCEO max −60 V, VCBO max −100 V, IC continuous −6.0 A, ICM peak −12.0 A." }, { "number": "3", "name": "E", "type": "passive",- "description": "Emitter of PNP transistor. Typically connected to the positive supply rail in high-side switch topologies. VEBO max \u22126.0 V."+ "description": "Emitter of PNP transistor. Typically connected to the positive supply rail in high-side switch topologies. VEBO max −6.0 V." }, { "number": "4", "name": "C", "type": "passive",- "description": "Collector tab (heat-spreading pad) of the SOT-223 package, internally connected to pin 2. Solder to a copper pour to improve thermal dissipation (R\u03b8JA drops from 155 \u00b0C/W to 64 \u00b0C/W with 645 mm\u00b2 pad)."+ "description": "Collector tab (heat-spreading pad) of the SOT-223 package, internally connected to pin 2. Solder to a copper pour to improve thermal dissipation (RθJA drops from 155 °C/W to 64 °C/W with 645 mm² pad)." } ], "provenance": {@@ -124,5 +124,8 @@ "docs/nss60600mz4t3g-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }