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NSS40200LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.md+81docs/hero.pngdocs/nss40200lt1g-datasheet.pdf+2892nss40200lt1g-etched.glbnss40200lt1g-hero.glbnss40200lt1g-hero.overlay.json+150nss40200lt1g.glbnss40200lt1g.kicad_mod+177nss40200lt1g.kicad_sym+25nss40200lt1g.lbr+116nss40200lt1g.step+1434package.json+160page.json+166viewers/footprint.html+1viewers/symbol.html+1README.mdadded+81@@ -0,0 +1,81 @@+# NSS40200LT1G++**onsemi** · Bipolar (BJT) · SOT-23++NSS40200LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | BASE | input | Base terminal of the PNP low VCE(sat) transistor; peak base current is rated at -300 mA (IBM). |+| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; emitter-base voltage is rated VEBO -7.0 Vdc. |+| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated -40 Vdc collector-emitter voltage (VCEO) and -2.0 A continuous collector current (-4.0 A peak). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | onsemi |+| Package | SOT-23 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Voltage | VCEO | | | -40 | Vdc | | 2 |+| Collector-Base Voltage | VCBO | | | -40 | Vdc | | 2 |+| Emitter-Base Voltage | VEBO | | | -7 | Vdc | | 2 |+| Collector Current - Continuous | IC | | | -2 | A | | 2 |+| Collector Current - Peak | ICM | | | -4 | A | | 2 |+| Base Current - Peak | IBM | | | -300 | mA | | 2 |+| Total Device Dissipation | PD | | | 460 | mW | TA = 25°C (Note 1: FR-4 @ 100 mm2, 1 oz. copper traces) | 2 |+| Derate above 25°C (Note 1) | PD | | | 3.7 | mW/°C | Derate above 25°C (Note 1: FR-4 @ 100 mm2, 1 oz. copper traces) | 2 |+| Thermal Resistance, Junction-to-Ambient (Note 1) | RJA | | | 270 | °C/W | Note 1: FR-4 @ 100 mm2, 1 oz. copper traces | 2 |+| Total Device Dissipation | PD | | | 540 | mW | TA = 25°C (Note 2: FR-4 @ 500 mm2, 1 oz. copper traces) | 2 |+| Derate above 25°C (Note 2) | PD | | | 4.3 | mW/°C | Derate above 25°C (Note 2: FR-4 @ 500 mm2, 1 oz. copper traces) | 2 |+| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | | | 230 | °C/W | Note 2: FR-4 @ 500 mm2, 1 oz. copper traces | 2 |+| Total Device Dissipation (Single Pulse) | PDsingle | | | 710 | mW | Single Pulse < 10 sec (Note 3: Thermal response) | 2 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | | | Vdc | IC = −10 mAdc, IB = 0 | 3 |+| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | | | Vdc | IC = −0.1 mAdc, IE = 0 | 3 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | -7 | | | Vdc | IE = −0.1 mAdc, IC = 0 | 3 |+| Collector Cutoff Current | ICBO | | | -0.1 | Adc | VCB = −40 Vdc, IE = 0 | 3 |+| Emitter Cutoff Current | IEBO | | | -0.1 | Adc | VEB = −7.0 Vdc | 3 |+| DC Current Gain | hFE | 250 | | 300 | | IC = −10 mA, VCE = −2.0 V | 3 |+| DC Current Gain | hFE | 220 | | | | IC = −500 mA, VCE = −2.0 V | 3 |+| DC Current Gain | hFE | 180 | | | | IC = −1.0 A, VCE = −2.0 V | 3 |+| DC Current Gain | hFE | 150 | | | | IC = −2.0 A, VCE = −2.0 V | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | -0.01 | -0.017 | V | IC = −0.1 A, IB = −0.010 A (Note 5) | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | -0.08 | -0.095 | V | IC = −1.0 A, IB = −0.100 A | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | -0.135 | -0.17 | V | IC = −1.0 A, IB = −0.010 A | 3 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | V | IC = −1.0 A, IB = −0.01 A | 3 |+| Base-Emitter Turn-on Voltage | VBE(on) | | | -0.9 | V | IC = −1.0 A, VCE = −2.0 V | 3 |+| Cutoff Frequency | fT | 100 | | | MHz | IC = −100 mA, VCE = −5.0 V, f = 100 MHz | 3 |+| Input Capacitance | Cibo | | | 325 | pF | VEB = 0.5 V, f = 1.0 MHz | 3 |+| Output Capacitance | Cobo | | | 62 | pF | VCB = 3.0 V, f = 1.0 MHz | 3 |+| Delay Time | td | | | 60 | ns | VCC = −30 V, IC = 750 mA, IB1 = 15 mA | 3 |+| Rise Time | tr | | | 120 | ns | VCC = −30 V, IC = 750 mA, IB1 = 15 mA | 3 |+| Storage Time | ts | | | 400 | ns | VCC = −30 V, IC = 750 mA, IB1 = 15 mA | 3 |+| Fall Time | tf | | | 130 | ns | VCC = −30 V, IC = 750 mA, IB1 = 15 mA | 3 |++## CAD (KiCad official)++- Symbol: `NSS40200LT1G`+- Footprint: `Package_TO_SOT_SMD:SOT-23`+- 3D model: SOT-23 (KiCad packages3D, STEP)+- 3D model files: `nss40200lt1g-etched.step` / `nss40200lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nss40200lt1g.step` / `nss40200lt1g.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586189171216568320) (7 pp, sha256 `6c63cff51a4229fc`, retrieved 2026-10-18, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/nss40200lt1g-datasheet.pdf)
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Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain \(Beta\) makes them ideal components in analog amplifiers.)+/Title (NSS40200L - Low V<sub>CE\(sat\)</sub> Transistor, PNP, -40 V, 2.0 A)+>>+endobj+2 0 obj+<<+/Type /Pages+/Kids [7 0 R 8 0 R 9 0 R 10 0 R 11 0 R 12 0 R 13 0 R]+/Count 7+>>+endobj+3 0 obj+<<+/DA (/Helv 0 Tf 0 g )+/DR 14 0 R+/Fields []+>>+endobj+4 0 obj+<<+/Length 4729+/Subtype /XML+/Type /Metadata+>>+stream +<?xpacket begin="" id="W5M0MpCehiHzreSzNTczkc9d"?>+<x:xmpmeta xmlns:x="adobe:ns:meta/" x:xmptk="Adobe XMP Core 5.6-c017 91.164464, 2020/06/15-10:20:05 ">+ <rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#">+ <rdf:Description rdf:about=""+ xmlns:pdf="http://ns.adobe.com/pdf/1.3/"+ xmlns:xmp="http://ns.adobe.com/xap/1.0/"+ xmlns:dc="http://purl.org/dc/elements/1.1/"+ xmlns:xmpMM="http://ns.adobe.com/xap/1.0/mm/"+ xmlns:illustrator="http://ns.adobe.com/illustrator/1.0/">+ <pdf:Producer>Acrobat Distiller 9.0.0 (Windows)</pdf:Producer>+ <xmp:CreatorTool>BroadVision, Inc.</xmp:CreatorTool>+ <xmp:ModifyDate>2020-10-06T09:21:22+02:00</xmp:ModifyDate>+ <xmp:CreateDate>2016-10-21T00:06:53-07:00</xmp:CreateDate>+ <xmp:MetadataDate>2020-10-06T09:21:22+02:00</xmp:MetadataDate>+ <dc:format>application/pdf</dc:format>+ <dc:title>+ <rdf:Alt>+ <rdf:li xml:lang="x-default">NSS40200L - Low V<sub>CE(sat)</sub> Transistor, PNP, -40 V, 2.0 A</rdf:li>+ </rdf:Alt>+ </dc:title>+ <dc:creator>+ <rdf:Seq>+ <rdf:li>ON Semiconductor</rdf:li>+ </rdf:Seq>+ </dc:creator>+ <dc:description>+ <rdf:Alt>+ <rdf:li xml:lang="x-default">ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. 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