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nce0130a: factory component page (tier=lcsc)

Ray ·3a9d00401c ·23d ago ·parent b4a4ad7
1 file changed +258−26
page.json+258−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "nce0130a",+  "title": "NCE0130A",+  "brief": "Wuxi NCE Power Semiconductor MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Wuxi NCE Power Semiconductor MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "nce0130a.kicad_sym",-    "nce0130a.kicad_mod",-    "nce0130a.glb",-    "nce0130a.step",-    "nce0130a.lbr",-    "docs/hero.png",-    "docs/nce0130a-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "nce0130a-hero.glb",-    "nce0130a-hero.overlay.json"-  ],   "component": {     "mpn": "NCE0130A",     "manufacturer": "Wuxi NCE Power Semiconductor",@@ -139,10 +122,259 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "Wuxi NCE Power Semiconductor",+      "Package": "TO-220F-3",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "ba8794c04181b3b3662c800f51bad3125745a818f373a813c0aa3f92aae83629",+      "rows": [+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 100,+          "typ": 115,+          "max": null,+          "conditions": "VGS=0V ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS=100V,VGS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±20V,VDS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 1.3,+          "typ": 1.9,+          "max": 2.5,+          "conditions": "VDS=VGS,ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 25,+          "max": 32,+          "conditions": "VGS=10V, ID=10A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.2,+          "conditions": "VGS=0V,IS=10A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current-Continuous",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current-Continuous",+          "symbol": "ID(100℃)",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 21,+          "conditions": "TC=100℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 120,+          "conditions": "Note 1 (repetitive rating, pulse width limited by maximum junction temperature)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 85,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "VDS Spike",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 120,+          "conditions": "10μs",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ,TSTG",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Case",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": 1.8,+          "max": null,+          "conditions": "Note 2 (surface mounted on FR4 board, t ≤ 10 sec)",+          "source_page": 1,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "nce0130a"+  ],+  "discovery_pitch": "NCE0130A (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "nce0130a.kicad_sym",+    "nce0130a.kicad_mod",+    "nce0130a.glb",+    "nce0130a.step",+    "nce0130a.lbr",+    "docs/hero.png",+    "docs/nce0130a-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "nce0130a-hero.glb",+    "nce0130a-hero.overlay.json"+  ]+}