component
MUN5232T1G
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onsemi Digital Transistors, SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.md+73docs/hero.pngdocs/mun5232t1g-datasheet.pdf+7113mun5232t1g-etched.glbmun5232t1g-hero.glbmun5232t1g-hero.overlay.json+150mun5232t1g.glbmun5232t1g.kicad_mod+297mun5232t1g.kicad_sym+25mun5232t1g.lbr+114mun5232t1g.step+1529package.json+165page.json+171viewers/footprint.html+1viewers/symbol.html+1README.mdadded+73@@ -0,0 +1,73 @@+# MUN5232T1G++**onsemi** · Digital Transistors · SC-70-3++MUN5232T1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | BASE | input | Input pin connected to the base through the integrated series bias resistor R1 (4.7 kΩ); input forward voltage is rated 30 Vdc and input reverse voltage 10 Vdc. |+| 2 | EMITTER | power_in | Emitter, labelled GROUND in the datasheet pin connections; the integrated base-emitter resistor R2 (4.7 kΩ) is connected between base and emitter. |+| 3 | COLLECTOR | output | Output pin; collector-emitter voltage is rated 50 Vdc and continuous collector current 100 mAdc. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | onsemi |+| Package | SC-70-3 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector−Base Cutoff Current | ICBO | | | 100 | nAdc | VCB = 50 V, IE = 0 | 4 |+| Collector−Emitter Cutoff Current | ICEO | | | 500 | nAdc | VCE = 50 V, IB = 0 | 4 |+| Emitter−Base Cutoff Current | IEBO | | | 1.5 | mAdc | VEB = 6.0 V, IC = 0 | 4 |+| Collector−Base Breakdown Voltage | V(BR)CBO | 50 | | | Vdc | IC = 10 A, IE = 0 | 4 |+| Collector−Emitter Breakdown Voltage (Note 5) | V(BR)CEO | 50 | | | Vdc | IC = 2.0 mA, IB = 0; Note 5: pulse width 300 msec, duty cycle ≤ 2% | 4 |+| DC Current Gain (Note 5) | hFE | 15 | 30 | | | IC = 5.0 mA, VCE = 10 V; Note 5: pulse width 300 msec, duty cycle ≤ 2% | 4 |+| Collector−Emitter Saturation Voltage (Note 5) | VCE(sat) | | | 0.25 | Vdc | IC = 10 mA, IB = 1.0 mA; Note 5: pulse width 300 msec, duty cycle ≤ 2% | 4 |+| Input Voltage (off) | Vi(off) | | 1.2 | 0.5 | Vdc | VCE = 5.0 V, IC = 100 A | 4 |+| Input Voltage (on) | Vi(on) | 2.5 | 2 | | Vdc | VCE = 0.3 V, IC = 20 mA | 4 |+| Output Voltage (on) | VOL | | | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | 4 |+| Output Voltage (off) | VOH | 4.9 | | | Vdc | VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k | 4 |+| Input Resistor R1 | R1 | 3.3 | 4.7 | 6.1 | k | | 4 |+| Resistor Ratio | R1/R2 | 0.8 | 1 | 1.2 | | | 4 |+| Maximum Ratings: Collector−Base Voltage | VCBO | | | 50 | Vdc | | 1 |+| Maximum Ratings: Collector−Emitter Voltage | VCEO | | | 50 | Vdc | | 1 |+| Maximum Ratings: Collector Current − Continuous | IC | | | 100 | mAdc | | 1 |+| Maximum Ratings: Input Forward Voltage | VIN(fwd) | | | 30 | Vdc | | 1 |+| Maximum Ratings: Input Reverse Voltage | VIN(rev) | | | 10 | Vdc | | 1 |+| Total Device Dissipation (SC−70/SOT−323) | PD | | | 202 | mW | TA = 25°C, Note 1: FR−4 @ Minimum Pad | 3 |+| Total Device Dissipation (SC−70/SOT−323) | PD | | | 310 | mW | TA = 25°C, Note 2: FR−4 @ 1.0 x 1.0 Inch Pad | 3 |+| Derate above 25°C (SC−70/SOT−323) | PD | | | 1.6 | mW/°C | Note 1: FR−4 @ Minimum Pad | 3 |+| Derate above 25°C (SC−70/SOT−323) | PD | | | 2.5 | mW/°C | Note 2: FR−4 @ 1.0 x 1.0 Inch Pad | 3 |+| Thermal Resistance, Junction to Ambient (SC−70/SOT−323) | RJA | | | 618 | °C/W | Note 1: FR−4 @ Minimum Pad | 3 |+| Thermal Resistance, Junction to Ambient (SC−70/SOT−323) | RJA | | | 403 | °C/W | Note 2: FR−4 @ 1.0 x 1.0 Inch Pad | 3 |+| Thermal Resistance, Junction to Lead (SC−70/SOT−323) | RJL | | | 280 | °C/W | Note 1: FR−4 @ Minimum Pad | 3 |+| Thermal Resistance, Junction to Lead (SC−70/SOT−323) | RJL | | | 332 | °C/W | Note 2: FR−4 @ 1.0 x 1.0 Inch Pad | 3 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 3 |++## CAD (KiCad official)++- Symbol: `MUN5232T1G`+- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`+- 3D model: SC-70-3 (KiCad packages3D, STEP)+- 3D model files: `mun5232t1g-etched.step` / `mun5232t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mun5232t1g.step` / `mun5232t1g.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590223425094004736) (13 pp, sha256 `829670ed312faf9c`, retrieved 2026-10-15, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/mun5232t1g-datasheet.pdf)
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