component
MS23N06A
Public Made by Adomby adom
Bruckewell MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated MOS control terminal; drives channel conduction between Drain and Source. VGS absolute maximum \u00b112 V; gate threshold VGS(th) 0.5-1.2 V (VDS=VGS, ID=250 \u00b5A). Total gate charge Qg \u2248 11.5 nC at VGS=4.5 V."+ "description": "Gate. Insulated MOS control terminal; drives channel conduction between Drain and Source. VGS absolute maximum ±12 V; gate threshold VGS(th) 0.5-1.2 V (VDS=VGS, ID=250 µA). Total gate charge Qg ≈ 11.5 nC at VGS=4.5 V." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source. Low-side power terminal of the N-channel MOSFET and reference for VGS. Body diode anode (VSD \u2264 1.2 V at IS=1.2 A). Continuous source current up to 5.8 A (TA=25 \u00b0C)."+ "description": "Source. Low-side power terminal of the N-channel MOSFET and reference for VGS. Body diode anode (VSD ≤ 1.2 V at IS=1.2 A). Continuous source current up to 5.8 A (TA=25 °C)." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain. High-side power terminal of the N-channel MOSFET; body diode cathode. VDS absolute maximum 30 V; BVDSS \u2265 30 V. Continuous drain current 5.8 A (TA=25 \u00b0C) / 4.9 A (TA=70 \u00b0C); pulsed IDM 20 A."+ "description": "Drain. High-side power terminal of the N-channel MOSFET; body diode cathode. VDS absolute maximum 30 V; BVDSS ≥ 30 V. Continuous drain current 5.8 A (TA=25 °C) / 4.9 A (TA=70 °C); pulsed IDM 20 A." } ], "provenance": {@@ -109,5 +109,8 @@ "docs/ms23n06a-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }