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Set visibility: public

Ray ·d5f9e719de ·28d ago ·parent f11c1df
1 file changed +21−18
page.json+21−18
@@ -38,19 +38,19 @@         "number": "2",         "name": "MIX/AD",         "type": "input",-        "description": "Dimming mode setting pin with 18\u03bcA current-source output. Voltage set by external resistor: <0.3V = mixed dimming, 0.5V-0.8V = PWM dimming, 1.0V-1.3V = analog dimming; float to use internal MODE register."+        "description": "Dimming mode setting pin with 18μA current-source output. Voltage set by external resistor: <0.3V = mixed dimming, 0.5V-0.8V = PWM dimming, 1.0V-1.3V = analog dimming; float to use internal MODE register."       },       {         "number": "3",         "name": "FREQ/SYNC",         "type": "bidirectional",-        "description": "Switching frequency setting and external SYNC pin. Resistor to GND sets fSW (fSW(kHz)=22000/R(k\u03a9)), or drive with an external clock to synchronize. Float to use internal FSW1:0 register. VFREQ \u2248 0.6V."+        "description": "Switching frequency setting and external SYNC pin. Resistor to GND sets fSW (fSW(kHz)=22000/R(kΩ)), or drive with an external clock to synchronize. Float to use internal FSW1:0 register. VFREQ ≈ 0.6V."       },       {         "number": "4",         "name": "EN",         "type": "input",-        "description": "IC enable pin. Pull high to enable (VEN_ON = 1.2V min rising), pull low to shut down (VEN_OFF = 0.4V max falling). 1M\u03a9 internal pull-down resistor."+        "description": "IC enable pin. Pull high to enable (VEN_ON = 1.2V min rising), pull low to shut down (VEN_OFF = 0.4V max falling). 1MΩ internal pull-down resistor."       },       {         "number": "5",@@ -68,7 +68,7 @@         "number": "7",         "name": "COMP",         "type": "passive",-        "description": "Loop compensation pin for the boost converter error amplifier. Connect an RC compensation network from COMP to AGND. GCOMP \u2248 100\u03bcA/V; source/sink limits 90\u03bcA/30\u03bcA."+        "description": "Loop compensation pin for the boost converter error amplifier. Connect an RC compensation network from COMP to AGND. GCOMP ≈ 100μA/V; source/sink limits 90μA/30μA."       },       {         "number": "8",@@ -80,7 +80,7 @@         "number": "9",         "name": "ISET",         "type": "passive",-        "description": "LED full-scale current setting. Tie a resistor from ISET to GND to set per-string LED current: ILED(mA) = 1245/R_ISET(k\u03a9). VISET \u2248 1.2V; RISET = 24.9k\u03a9 yields ILED = 50mA."+        "description": "LED full-scale current setting. Tie a resistor from ISET to GND to set per-string LED current: ILED(mA) = 1245/R_ISET(kΩ). VISET ≈ 1.2V; RISET = 24.9kΩ yields ILED = 50mA."       },       {         "number": "10",@@ -104,25 +104,25 @@         "number": "13",         "name": "LED4",         "type": "input",-        "description": "LED string 4 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD \u2248 350mV at 20mA, \u2248850mV at 100mA. Absolute max 50V. Tie to GND if unused (auto-detected)."+        "description": "LED string 4 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD ≈ 350mV at 20mA, ≈850mV at 100mA. Absolute max 50V. Tie to GND if unused (auto-detected)."       },       {         "number": "14",         "name": "LED3",         "type": "input",-        "description": "LED string 3 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD \u2248 350mV at 20mA, \u2248850mV at 100mA. Absolute max 50V."+        "description": "LED string 3 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD ≈ 350mV at 20mA, ≈850mV at 100mA. Absolute max 50V."       },       {         "number": "15",         "name": "LED2",         "type": "input",-        "description": "LED string 2 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD \u2248 350mV at 20mA, \u2248850mV at 100mA. Absolute max 50V."+        "description": "LED string 2 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD ≈ 350mV at 20mA, ≈850mV at 100mA. Absolute max 50V."       },       {         "number": "16",         "name": "LED1",         "type": "input",-        "description": "LED string 1 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD \u2248 350mV at 20mA, \u2248850mV at 100mA. Absolute max 50V."+        "description": "LED string 1 current input (cathode). Sinks up to 150mA of regulated string current. Headroom VHD ≈ 350mV at 20mA, ≈850mV at 100mA. Absolute max 50V."       },       {         "number": "17",@@ -134,49 +134,49 @@         "number": "18",         "name": "SW",         "type": "power_out",-        "description": "Drain of the internal low-side N-channel MOSFET switch (RDS(ON) \u2248 100m\u03a9). Connect the boost inductor here. Absolute max 50V (transient -1.0V <100ns)."+        "description": "Drain of the internal low-side N-channel MOSFET switch (RDS(ON) ≈ 100mΩ). Connect the boost inductor here. Absolute max 50V (transient -1.0V <100ns)."       },       {         "number": "19",         "name": "OVP",         "type": "input",-        "description": "Over-voltage protection sense input. Connect a resistor divider from VOUT to OVP to GND to set the OVP threshold; internal VOVP \u2248 2V (nominal), 200mV hysteresis, 100mV UVLO threshold for VOUT-short detection."+        "description": "Over-voltage protection sense input. Connect a resistor divider from VOUT to OVP to GND to set the OVP threshold; internal VOVP ≈ 2V (nominal), 200mV hysteresis, 100mV UVLO threshold for VOUT-short detection."       },       {         "number": "20",         "name": "STH",         "type": "passive",-        "description": "Short-LED protection threshold set pin, 18\u03bcA current source. Connect a resistor to GND: V_STH = 0.18 \u00d7 R_STH(k\u03a9); actual threshold is 10 \u00d7 V_STH. Float to use internal TH_S1:0 register (2.5V/5V/7.5V/10V)."+        "description": "Short-LED protection threshold set pin, 18μA current source. Connect a resistor to GND: V_STH = 0.18 × R_STH(kΩ); actual threshold is 10 × V_STH. Float to use internal TH_S1:0 register (2.5V/5V/7.5V/10V)."       },       {         "number": "21",         "name": "ADR",         "type": "input",-        "description": "I2C slave address select. 18\u03bcA pull-up: floating \u2192 0x38, <0.4V \u2192 0x3A, 0.4V-1.4V \u2192 0x39. Program via resistor to GND."+        "description": "I2C slave address select. 18μA pull-up: floating → 0x38, <0.4V → 0x3A, 0.4V-1.4V → 0x39. Program via resistor to GND."       },       {         "number": "22",         "name": "VCC",         "type": "power_out",-        "description": "Internal 5V LDO output that powers the internal logic and gate driver. Bypass to AGND with a ceramic capacitor (e.g., 1\u03bcF) placed close to the pin. Valid for 6V < VIN < 24V, 0-10mA load."+        "description": "Internal 5V LDO output that powers the internal logic and gate driver. Bypass to AGND with a ceramic capacitor (e.g., 1μF) placed close to the pin. Valid for 6V < VIN < 24V, 0-10mA load."       },       {         "number": "23",         "name": "SD",         "type": "output",-        "description": "Gate drive for an optional external disconnect P-channel MOSFET between VIN and VOUT path. Turns off the external PMOS when a fault occurs (VIN \u2212 VSD \u2248 6V clamp; 60\u03bcA pull-down current). Float if unused."+        "description": "Gate drive for an optional external disconnect P-channel MOSFET between VIN and VOUT path. Turns off the external PMOS when a fault occurs (VIN − VSD ≈ 6V clamp; 60μA pull-down current). Float if unused."       },       {         "number": "24",         "name": "VIN",         "type": "power_in",-        "description": "Power supply input to the IC. Operating range 3.5V to 36V (absolute max 42V). UVLO rising threshold \u2248 3.1V with 100mV hysteresis. Bypass to PGND with a low-ESR ceramic (e.g., 10\u03bcF)."+        "description": "Power supply input to the IC. Operating range 3.5V to 36V (absolute max 42V). UVLO rising threshold ≈ 3.1V with 100mV hysteresis. Bypass to PGND with a low-ESR ceramic (e.g., 10μF)."       },       {         "number": "EP",         "name": "AGND",         "type": "power_in",-        "description": "Exposed thermal pad on the bottom of the QFN. Connect to AGND with multiple vias for electrical reference and heat sinking (\u03b8JA = 42\u00b0C/W on JESD51-7 4-layer PCB)."+        "description": "Exposed thermal pad on the bottom of the QFN. Connect to AGND with multiple vias for electrical reference and heat sinking (θJA = 42°C/W on JESD51-7 4-layer PCB)."       }     ],     "provenance": {@@ -246,5 +246,8 @@     "docs/mp3364gr-z-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file