component
MMBTA28-7-F
Public Made by Adomby adom
Diodes Incorporated Darlington Transistors, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "B", "type": "input",- "description": "Base of the NPN Darlington pair. Base-emitter turn-on voltage VBE(on) \u2264 2.0 V at IC = 100 mA, VCE = 5 V; emitter-base breakdown BVEBO \u2265 12 V."+ "description": "Base of the NPN Darlington pair. Base-emitter turn-on voltage VBE(on) ≤ 2.0 V at IC = 100 mA, VCE = 5 V; emitter-base breakdown BVEBO ≥ 12 V." }, { "number": "2", "name": "E", "type": "output",- "description": "Emitter of the NPN Darlington pair. Emitter-base breakdown BVEBO \u2265 12 V; sinks the composite collector-emitter current up to 500 mA continuous."+ "description": "Emitter of the NPN Darlington pair. Emitter-base breakdown BVEBO ≥ 12 V; sinks the composite collector-emitter current up to 500 mA continuous." }, { "number": "3", "name": "C", "type": "passive",- "description": "Collector of the NPN Darlington pair. Rated BVCES \u2265 80 V and BVCBO \u2265 80 V; continuous collector current IC = 500 mA; VCE(sat) \u2264 1.5 V at IC = 100 mA, IB = 100 \u00b5A."+ "description": "Collector of the NPN Darlington pair. Rated BVCES ≥ 80 V and BVCBO ≥ 80 V; continuous collector current IC = 500 mA; VCE(sat) ≤ 1.5 V at IC = 100 mA, IB = 100 µA." } ], "provenance": {@@ -118,5 +118,8 @@ "docs/mmbta28-7-f-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }