component
MJD112
Public Made by Adomby adom
Changjing Darlington Transistors, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mjd112: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+313
README.md+30@@ -21,6 +21,36 @@ MJD112 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-base breakdown voltage | V(BR)CBO | 100 | | | V | IC=1mA,IE=0 | 1 |+| Collector-emitter breakdown voltage | V(BR)CEO | 100 | | | V | IC =30mA,IB=0 | 1 |+| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE=5mA,IC=0 | 1 |+| Collector cut-off current | ICBO | | | 20 | µA | VCB=100V,IE=0 | 1 |+| Collector-emitter cut-off current | ICEO | | | 20 | µA | VCE=50V,IE=0 | 1 |+| Emitter cut-off current | IEBO | | | 2 | mA | VEB=5V,IC=0 | 1 |+| DC current gain hFE(1) | hFE(1) | 500 | | | | VCE=3V,IC=500mA | 1 |+| DC current gain hFE(2) | hFE(2) | 1000 | | 12000 | | VCE=3V,IC=2A | 1 |+| DC current gain hFE(3) | hFE(3) | 200 | | | | VCE=3V,IC=4A | 1 |+| Collector-emitter saturation voltage VCE(sat)1 | VCE(sat)1 | | | 2 | V | IC=2A,IB=8mA | 1 |+| Collector-emitter saturation voltage VCE(sat)2 | VCE(sat)2 | | | 3 | V | IC=4A,IB=40mA | 1 |+| Base-emitter voltage | VBE | | | 2.8 | V | VCE=3V,IC=2A | 1 |+| Transition frequency | fT | 25 | | | MHz | VCE=10V,IC=0.75A,f=1MHz | 1 |+| Collector output capacitance | Cob | | | 100 | pF | VCB=10V,IE=0,f=0.1MHz | 1 |+| Collector-base voltage | VCBO | | | 100 | V | | 1 |+| Collector-emitter voltage | VCEO | | | 100 | V | | 1 |+| Emitter-base voltage | VEBO | | | 5 | V | | 1 |+| Collector current -Continuous | IC | | | 2 | A | | 1 |+| Collector power dissipation | PC | | | 1 | W | | 1 |+| Junction temperature | TJ | | | 150 | ℃ | | 1 |+| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Thermal resistance, junction to case | RθJC | | | 6.25 | ℃/W | | 1 |+| Thermal resistance, junction to ambient | RθJA | | | 71.4 | ℃/W | | 1 |+ ## CAD (KiCad official) - Symbol: `MJD112`
page.json+283@@ -133,6 +133,289 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "56a21527a3aeb20a",+ "rows": [+ {+ "name": "Collector-base breakdown voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC=1mA,IE=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC =30mA,IB=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base breakdown voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE=5mA,IC=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VCB=100V,IE=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter cut-off current",+ "symbol": "ICEO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VCE=50V,IE=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VEB=5V,IC=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC current gain hFE(1)",+ "symbol": "hFE(1)",+ "kind": "electrical",+ "unit": "",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VCE=3V,IC=500mA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC current gain hFE(2)",+ "symbol": "hFE(2)",+ "kind": "electrical",+ "unit": "",+ "min": 1000,+ "typ": null,+ "max": 12000,+ "conditions": "VCE=3V,IC=2A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC current gain hFE(3)",+ "symbol": "hFE(3)",+ "kind": "electrical",+ "unit": "",+ "min": 200,+ "typ": null,+ "max": null,+ "conditions": "VCE=3V,IC=4A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage VCE(sat)1",+ "symbol": "VCE(sat)1",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "IC=2A,IB=8mA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage VCE(sat)2",+ "symbol": "VCE(sat)2",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "IC=4A,IB=40mA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Base-emitter voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2.8,+ "conditions": "VCE=3V,IC=2A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "VCE=10V,IC=0.75A,f=1MHz",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector output capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB=10V,IE=0,f=0.1MHz",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector current -Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector power dissipation",+ "symbol": "PC",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 6.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 71.4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],