component
MGSF1N03LT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mgsf1n03lt1g: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+353−1
README.md+33@@ -21,6 +21,39 @@ MGSF1N03LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 30 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (RθJL, steady state) | ID | | | 2.1 | A | Steady state, TA = 25°C | 1 |+| Continuous Drain Current (RθJL, steady state) | ID | | | 1.5 | A | Steady state, TA = 85°C | 1 |+| Power Dissipation (RθJL, steady state) | PD | | | 0.69 | W | Steady state, TA = 25°C | 1 |+| Continuous Drain Current (Note 1) | ID | | | 1.6 | A | Steady state, TA = 25°C | 1 |+| Continuous Drain Current (Note 1) | ID | | | 1.2 | A | Steady state, TA = 85°C | 1 |+| Power Dissipation (Note 1) | PD | | | 0.42 | W | TA = 25°C | 1 |+| Pulsed Drain Current | IDM | | | 6 | A | tp = 10 s | 1 |+| ESD Capability (HBM) | ESD | | | 125 | V | C = 100 pF, RS = 1500 | 1 |+| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode) | IS | | | 2.1 | A | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8" from case for 10 sec | 1 |+| Junction-to-Foot Thermal Resistance, Steady State | RθJL | | | 180 | °C/W | Steady state | 1 |+| Junction-to-Ambient Thermal Resistance, Steady State (Note 1) | RθJA | | | 300 | °C/W | Steady state, Note 1 | 1 |+| Junction-to-Ambient Thermal Resistance, t < 10 s (Note 1) | RθJA | | | 250 | °C/W | t < 10 s, Note 1 | 1 |+| Junction-to-Ambient Thermal Resistance, Steady State (Note 2) | RθJA | | | 400 | °C/W | Steady state, Note 2 | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | | | Vdc | VGS = 0 Vdc, ID = 10 Adc | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | Adc | VDS = 30 Vdc, VGS = 0 Vdc | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 10 | Adc | VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nAdc | VGS = ±20 Vdc, VDS = 0 Vdc | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.4 | Vdc | VDS = VGS, ID = 250 Adc | 2 |+| Static Drain-to-Source On-Resistance | rDS(on) | | 0.08 | 0.1 | Ω | VGS = 10 Vdc, ID = 1.2 Adc | 2 |+| Static Drain-to-Source On-Resistance | rDS(on) | | 0.125 | 0.145 | Ω | VGS = 4.5 Vdc, ID = 1.0 Adc | 2 |+| Continuous Current (Source-Drain Diode) | IS | | | 0.6 | A | | 2 |+| Pulsed Current (Source-Drain Diode) | ISM | | | 0.75 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `MGSF1N03LT1G`
page.json+320−1@@ -150,6 +150,325 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "96849ff8fb35acfd",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (RθJL, steady state)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (RθJL, steady state)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "Steady state, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (RθJL, steady state)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.69,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Steady state, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.42,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "tp = 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "ESD Capability (HBM)",+ "symbol": "ESD",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "C = 100 pF, RS = 1500",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8\" from case for 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Foot Thermal Resistance, Steady State",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, Steady State (Note 1)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Steady state, Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, t < 10 s (Note 1)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "t < 10 s, Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, Steady State (Note 2)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 400,+ "conditions": "Steady state, Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 Vdc, ID = 10 Adc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "Adc",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30 Vdc, VGS = 0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "Adc",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nAdc",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20 Vdc, VDS = 0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 1,+ "typ": 1.7,+ "max": 2.4,+ "conditions": "VDS = VGS, ID = 250 Adc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.08,+ "max": 0.1,+ "conditions": "VGS = 10 Vdc, ID = 1.2 Adc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.125,+ "max": 0.145,+ "conditions": "VGS = 4.5 Vdc, ID = 1.0 Adc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Current (Source-Drain Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Current (Source-Drain Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.75,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +510,4 @@ "visibility": { "public": true }-}+}