component
ME20P06-G
Public Made by Adomby adom
MATSUKI MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
me20p06-g: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ ME20P06-G from MATSUKI, in a TO-252-2(DPAK). Pinout and pin descriptions extract | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | -17.7 | A | TC=25℃ | 1 |+| Continuous Drain Current | ID | | | -14.1 | A | TC=70℃ | 1 |+| Pulsed Drain Current | IDM | | | -71 | A | | 1 |+| Maximum Power Dissipation | PD | | | 39.1 | W | TC=25℃ | 1 |+| Maximum Power Dissipation | PD | | | 25 | W | TC=70℃ | 1 |+| Operating Junction Temperature | TJ | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance-Junction to Case | RθJC | | | 3.2 | ℃/W | Device mounted on 1 in² FR4 board with 2 oz copper (footnote *) | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS=0V, ID=-250μA | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250μA | 2 |+| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-60V, VGS=0V | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 65 | 78 | mΩ | VGS=-10V, ID=-20A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 80 | 100 | mΩ | VGS=-4.5V, ID=-16A | 2 |+| Diode Forward Voltage | VSD | | -1 | -1.2 | V | IS=-20A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `ME20P06-G`
page.json+200−1@@ -148,6 +148,205 @@ "Package": "TO-252-2(DPAK)", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "bac098b1e10a6344",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -17.7,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -14.1,+ "conditions": "TC=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -71,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 39.1,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "TC=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance-Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 3.2,+ "conditions": "Device mounted on 1 in² FR4 board with 2 oz copper (footnote *)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -3,+ "conditions": "VDS=VGS, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-60V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 65,+ "max": 78,+ "conditions": "VGS=-10V, ID=-20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 80,+ "max": 100,+ "conditions": "VGS=-4.5V, ID=-16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -1,+ "max": -1.2,+ "conditions": "IS=-20A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +388,4 @@ "visibility": { "public": true }-}+}