component
ME15N10-G
Public Made by Adomby adom
MATSUKI MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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me15n10-g: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -21,6 +21,28 @@ ME15N10-G from MATSUKI, in a TO-252-2(DPAK). Pinout and pin descriptions extract | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 100 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 14.7 | A | TC=25℃ | 1 |+| Continuous Drain Current | ID | | | 13.6 | A | TC=70℃ | 1 |+| Pulsed Drain Current | IDM | | | 59 | A | | 1 |+| Maximum Power Dissipation | PD | | | 34.7 | W | TC=25℃ | 1 |+| Maximum Power Dissipation | PD | | | 22.2 | W | TC=70℃ | 1 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance-Junction to Case | RθJC | | | 3.6 | ℃/W | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=250μA | 2 |+| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=80V, VGS=0V | 2 |+| Drain-Source On-Resistance | RDS(ON) | | 80 | 100 | mΩ | VGS=10V, ID=8A | 2 |+| Diode Forward Voltage | VSD | | 0.9 | 1.2 | V | IS=8A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `ME15N10-G`
page.json+188−1@@ -148,6 +148,193 @@ "Package": "TO-252-2(DPAK)", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "25600f32b27908ea",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 14.7,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 13.6,+ "conditions": "TC=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 59,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 34.7,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 22.2,+ "conditions": "TC=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance-Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 3.6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 3,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=80V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 80,+ "max": 100,+ "conditions": "VGS=10V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.2,+ "conditions": "IS=8A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +376,4 @@ "visibility": { "public": true }-}+}