component
LP2301LT1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
lp2301lt1g: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ LP2301LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain−to−Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS = 0 V, ID = -250 μA | 2 |+| Gate Threshold Voltage | VGS(TH) | -0.4 | | 0.9 | V | VGS = VDS, ID = -250 μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = -9.6 V, VGS = 0 V | 2 |+| Gate−to−Source Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |+| Static Drain−to−Source On Resistance | RDS(on) | | 69 | 100 | mΩ | VGS = -4.5 V, ID = -2.8 A | 2 |+| Static Drain−to−Source On Resistance | RDS(on) | | 83 | 150 | mΩ | VGS = -2.5 V, ID = -2 A | 2 |+| Max. Diode Forward Current | IS | | | -2.4 | A | | 2 |+| Forward Diode Voltage | VSD | | -0.8 | -1.2 | V | VGS = 0 V, IS = -0.75 A | 2 |+| Drain−to−Source Voltage | VDSS | | | -20 | V | | 1 |+| Gate−to−Source Voltage | VGS | -8 | | 8 | V | | 1 |+| Continuous Drain Current | ID | | | -2.3 | A | TA = 25°C | 1 |+| Pulsed Drain Current | IDM | | | -8 | A | | 1 |+| Maximum Power Dissipation | PD | | | 0.9 | W | | 1 |+| Maximum Power Dissipation | PD | | | 0.57 | W | | 1 |+| Operating and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 175 | °C/W | Note 1: device mounted on 1 in² FR4 board with 2 oz copper | 1 |+ ## CAD (KiCad official) - Symbol: `LP2301LT1G`
page.json+200−1@@ -147,6 +147,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9ff86087e10c62c0",+ "rows": [+ {+ "name": "Drain−to−Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": null,+ "max": 0.9,+ "conditions": "VGS = VDS, ID = -250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -9.6 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate−to−Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±8 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain−to−Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 69,+ "max": 100,+ "conditions": "VGS = -4.5 V, ID = -2.8 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain−to−Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 83,+ "max": 150,+ "conditions": "VGS = -2.5 V, ID = -2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Max. Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = -0.75 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain−to−Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate−to−Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.3,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.57,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 175,+ "conditions": "Note 1: device mounted on 1 in² FR4 board with 2 oz copper",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +387,4 @@ "visibility": { "public": true }-}+}