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lp2301blt1g: specified limits as data (metadata.characteristics, 17 rows from the datasheet)

Ray ·c42f363219 ·24d ago ·parent b6964b7
2 files changed +236−1
README.md+24
@@ -21,6 +21,30 @@ LP2301BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from th | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -20 |  |  | V |  | 1 |+| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |+| Continuous Drain Current | ID | -2.8 |  |  | A |  | 1 |+| Pulsed Drain Current | IDM | -8 |  |  | A | Pulse width limited by maximum junction temperature (note 1) | 1 |+| Maximum Power Dissipation | PD |  |  | 0.9 | W | TA = 25°C | 1 |+| Maximum Power Dissipation | PD |  |  | 0.57 | W | TA = 75°C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |+| Junction-to-Ambient Thermal Resistance | RqJA |  |  | 140 | °C/W | PCB mounted, 1 in² 2oz Cu PCB (note 2) | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0V, ID = -250uA | 2 |+| Drain-Source On-State Resistance | RDS(on) |  | 69 | 100 | mΩ | VGS = -4.5V, ID = -2.8A | 2 |+| Drain-Source On-State Resistance | RDS(on) |  | 83 | 150 | mΩ | VGS = -2.5V, ID = -2.0A | 2 |+| Gate Threshold Voltage | VGS(th) | -0.4 |  | -0.9 | V | VDS = VGS, ID = -250uA | 2 |+| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS = -9.6V, VGS = 0V | 2 |+| Gate Body Leakage | IGSS | -100 |  | 100 | nA | VGS = ±8V, VDS = 0V | 2 |+| Forward Transconductance | gfs | 6.5 |  |  | S | VDS = -5V, ID = -4.0A | 2 |+| Max. Diode Forward Current | IS |  |  | -2.4 | A |  | 2 |+| Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | IS = -0.75A, VGS = 0V | 2 |+ ## CAD (KiCad official)  - Symbol: `LP2301BLT1G`
page.json+212−1
@@ -147,6 +147,217 @@       "Package": "SOT-23",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "c2202879fe0519f7",+      "rows": [+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": null,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -8,+          "typ": null,+          "max": 8,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": -2.8,+          "typ": null,+          "max": null,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": -8,+          "typ": null,+          "max": null,+          "conditions": "Pulse width limited by maximum junction temperature (note 1)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 0.9,+          "conditions": "TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 0.57,+          "conditions": "TA = 75°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Ambient Thermal Resistance",+          "symbol": "RqJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 140,+          "conditions": "PCB mounted, 1 in² 2oz Cu PCB (note 2)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0V, ID = -250uA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 69,+          "max": 100,+          "conditions": "VGS = -4.5V, ID = -2.8A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 83,+          "max": 150,+          "conditions": "VGS = -2.5V, ID = -2.0A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": -0.4,+          "typ": null,+          "max": -0.9,+          "conditions": "VDS = VGS, ID = -250uA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "uA",+          "min": null,+          "typ": null,+          "max": -1,+          "conditions": "VDS = -9.6V, VGS = 0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Body Leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS = ±8V, VDS = 0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance",+          "symbol": "gfs",+          "kind": "electrical",+          "unit": "S",+          "min": 6.5,+          "typ": null,+          "max": null,+          "conditions": "VDS = -5V, ID = -4.0A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Max. Diode Forward Current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": -2.4,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": -0.8,+          "max": -1.2,+          "conditions": "IS = -0.75A, VGS = 0V",+          "source_page": 2,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -188,4 +399,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}