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Set visibility: public

Ray ·c8ae09fb76 ·1mo ago ·parent 601d982
1 file changed +6−3
page.json+6−3
@@ -32,7 +32,7 @@         "number": "1",         "name": "G",         "type": "input",-        "description": "Gate. Control terminal for the N-channel enhancement mode MOSFET. VGS(th) typ 1.5V (1.2V min / 2.5V max at VDS=VGS, ID=250\u03bcA). Absolute maximum VGSS = \u00b120V. Rated for full enhancement at VGS=10V (RDS(on) typ 29m\u03a9) and logic-level operation at VGS=4.5V (RDS(on) typ 45m\u03a9)."+        "description": "Gate. Control terminal for the N-channel enhancement mode MOSFET. VGS(th) typ 1.5V (1.2V min / 2.5V max at VDS=VGS, ID=250μA). Absolute maximum VGSS = ±20V. Rated for full enhancement at VGS=10V (RDS(on) typ 29mΩ) and logic-level operation at VGS=4.5V (RDS(on) typ 45mΩ)."       },       {         "number": "2",@@ -44,7 +44,7 @@         "number": "3",         "name": "D",         "type": "passive",-        "description": "Drain. Switched high-side terminal of the N-channel MOSFET. VDSS = 30V max (V(BR)DSS typ 32V at VGS=0V, ID=250\u03bcA). Continuous drain current ID = 4.2A at TA=25\u2103 (2.6A at TA=70\u2103); pulsed IDM = 16A."+        "description": "Drain. Switched high-side terminal of the N-channel MOSFET. VDSS = 30V max (V(BR)DSS typ 32V at VGS=0V, ID=250μA). Continuous drain current ID = 4.2A at TA=25℃ (2.6A at TA=70℃); pulsed IDM = 16A."       }     ],     "provenance": {@@ -114,5 +114,8 @@     "docs/lm3404b-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file