LESD8D12CT5G-HXY

@@ -0,0 +1,58 @@+# LESD8D12CT5G-HXY++**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L++LESD8D12CT5G-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode, which protects one bi-directional line; the datasheet gives no separate pin function label or polarity for this terminal. |+| 2 | 2 | passive | The other terminal of the bidirectional ESD protection diode, which protects one bi-directional line; the datasheet gives no separate pin function label or polarity for this terminal. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | HXY MOSFET |+| Package | DFN1006-2L |+| Category | Circuit Protection |+| Pins | 2 |++## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Breakdown voltage (VBR) minimum at IT | VBR | 13.3 |  |  | V | IT 1.0 mA, TA=25°C | 2 |+| Working peak reverse voltage | VRWM |  |  | 12 | V |  | 2 |+| Clamping voltage at peak pulse current | VC |  |  | 16 | V | IPP = 8 A, surge per Figure 1 | 2 |+| Peak pulse current | IPP |  |  | 8 | A |  | 2 |+| Peak pulse power (table) | PPK |  |  | 100 | W |  | 2 |+| Reverse leakage current at VRWM | IR |  |  | 1 | A | @ VRWM | 2 |+| Junction capacitance | C |  | 17 |  | pF |  | 2 |+| Peak pulse power (8/20 µs) | PPP |  |  | 140 | W | tp = 8/20 µs | 1 |+| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10 s | 1 |+| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |+| Operating temperature range | Top | -55 |  | 150 | °C |  | 1 |+| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |+| ESD withstand, IEC61000-4-2 |  | -20 |  | 20 | kV | IEC61000-4-2 air discharge and contact discharge | 1 |++## CAD (KiCad official)++- Symbol: `LESD8D12CT5G-HXY`+- Footprint: `Diode_SMD:D_SOD-882`+- 3D model: DFN1006-2L (KiCad packages3D, STEP)+- 3D model files: `lesd8d12ct5g-hxy-etched.step` / `lesd8d12ct5g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lesd8d12ct5g-hxy.step` / `lesd8d12ct5g-hxy.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757149344036331520) (4 pp, sha256 `8bc8c71c96eda523`, retrieved 2026-10-19, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/lesd8d12ct5g-hxy-datasheet.pdf)

@@ -0,0 +1,27 @@+{+  "schema_version": 1,+  "type": "component",+  "slug": "lesd8d12ct5g-hxy",+  "title": "lesd8d12ct5g-hxy",+  "brief": "HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "version": "0.1.0",+  "author": {+    "handle": "ray",+    "name": "Ray"+  },+  "visibility": {+    "public": true+  },+  "component": {+    "mpn": "LESD8D12CT5G-HXY",+    "manufacturer": "HXY MOSFET",+    "package": "DFN1006-2L",+    "pin_count": 2,+    "category": "Diodes",+    "subcategory": "TVS Diodes",+    "parts": {},+    "distributor_links": {+      "lcsc": "C18198395"+    }+  }+}\ No newline at end of file