component
L2SC1623RLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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l2sc1623rlt1g: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ L2SC1623RLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| DC Current Gain (R class) | hFE | 180 | | 390 | | IC=1.0mA, VCE=6V | 2 |+| Collector Cutoff Current | ICBO | | | 0.1 | μA | VCB=60V | 1 |+| Emitter Cutoff Current | IEBO | | | 0.1 | μA | VBE=5V | 1 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | 0.15 | 0.3 | V | IC=100mA, IB=10mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | 0.86 | 1 | V | IC=100mA, IB=10mA | 2 |+| Base-Emitter On Voltage | VBE | 0.55 | 0.62 | 0.65 | V | IC=1mA,VCE=6.0V | 2 |+| Collector-Emitter Voltage | VCEO | | | 50 | V | | 1 |+| Collector-Base Voltage | VCBO | | | 60 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | 7 | V | | 1 |+| Collector Current-Continuous | IC | | | 150 | mAdc | | 1 |+| Junction and Storage Temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | FR-5 Board, (1) | 1 |+| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | Alumina Substrate, (2) TA=25°C | 1 |+| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | | | 556 | °C/W | FR-5 Board, (1) | 1 |+| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | | | 417 | °C/W | Alumina Substrate, (2) | 1 |+| Current-Gain-Bandwidth Product | Ft | | 250 | | MHz | VCE=6.0V, IE=-10mA | 2 |+| Output Capacitance | Cob | | 3 | | Pf | VCE=6V, IE=0, f=1.0MHz | 2 |+ ## CAD (KiCad official) - Symbol: `L2SC1623RLT1G`
page.json+212−1@@ -147,6 +147,217 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "317064f993da5c37",+ "rows": [+ {+ "name": "DC Current Gain (R class)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 180,+ "typ": null,+ "max": 390,+ "conditions": "IC=1.0mA, VCE=6V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VCB=60V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VBE=5V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.15,+ "max": 0.3,+ "conditions": "IC=100mA, IB=10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.86,+ "max": 1,+ "conditions": "IC=100mA, IB=10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "V",+ "min": 0.55,+ "typ": 0.62,+ "max": 0.65,+ "conditions": "IC=1mA,VCE=6.0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current-Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (FR-5 Board)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 Board, (1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (Alumina Substrate)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina Substrate, (2) TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (FR-5 Board)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 Board, (1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (Alumina Substrate)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina Substrate, (2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain-Bandwidth Product",+ "symbol": "Ft",+ "kind": "electrical",+ "unit": "MHz",+ "min": null,+ "typ": 250,+ "max": null,+ "conditions": "VCE=6.0V, IE=-10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "Pf",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "VCE=6V, IE=0, f=1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +399,4 @@ "visibility": { "public": true }-}+}