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Set visibility: public

Ray ·2eb6b596f1 ·1mo ago ·parent 08edfa2
1 file changed +8−5
page.json+8−5
@@ -38,7 +38,7 @@         "number": "2",         "name": "ROVP",         "type": "input",-        "description": "Output over-voltage protection setting pin and enable input. Connect a resistor (>6k\u03a9 recommended) to GND to program the OVP threshold; if left floating, OVP is disabled. Tying this pin to GND (V_ROVP < 150mV) disables/shuts down the IC. Sources I_ROVP \u2248 49\u03bcA."+        "description": "Output over-voltage protection setting pin and enable input. Connect a resistor (>6kΩ recommended) to GND to program the OVP threshold; if left floating, OVP is disabled. Tying this pin to GND (V_ROVP < 150mV) disables/shuts down the IC. Sources I_ROVP ≈ 49μA."       },       {         "number": "3",@@ -50,13 +50,13 @@         "number": "4",         "name": "HVDD",         "type": "power_in",-        "description": "High-voltage supply pin for the chip. Absolute max 650V; startup threshold HVDD_ON \u2248 11.5V typ, shutdown HVDD_OFF \u2248 6.6V typ. HV charging current ~10mA at HVDD=20V; leakage 10-60\u03bcA."+        "description": "High-voltage supply pin for the chip. Absolute max 650V; startup threshold HVDD_ON ≈ 11.5V typ, shutdown HVDD_OFF ≈ 6.6V typ. HV charging current ~10mA at HVDD=20V; leakage 10-60μA."       },       {         "number": "5",         "name": "Drain",         "type": "passive",-        "description": "Drain of the internal 500V power MOSFET. Pins 5 and 6 are tied together internally to the same drain node. Rdson typ 12\u03a9 for KP107AL variant."+        "description": "Drain of the internal 500V power MOSFET. Pins 5 and 6 are tied together internally to the same drain node. Rdson typ 12Ω for KP107AL variant."       },       {         "number": "6",@@ -68,7 +68,7 @@         "number": "7",         "name": "CS",         "type": "input",-        "description": "Current-sense input pin for the MOSFET source current. Peak-current reference V_cs(max) \u2248 600mV typ; leading-edge blanking T_LEB \u2248 500ns; over-current shutdown delay T_D_OC \u2248 100ns."+        "description": "Current-sense input pin for the MOSFET source current. Peak-current reference V_cs(max) ≈ 600mV typ; leading-edge blanking T_LEB ≈ 500ns; over-current shutdown delay T_D_OC ≈ 100ns."       }     ],     "provenance": {@@ -132,5 +132,8 @@     "docs/kp107alspa-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file