component
KIRLML5203TRPBF
Public Made by Adomby adom
KUU MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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kirlml5203trpbf: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ KIRLML5203TRPBF from KUU, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | -3 | A | | 1 |+| Pulsed Diode Current | IDM | | | -24 | A | | 1 |+| Power Dissipation | PD | | | 1.25 | W | | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | t≤5s | 1 |+| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |+| Drain-source breakdown voltage | V(BR)DSS | -30 | | | V | VGS = 0V, ID = -250µA | 2 |+| Gate-source threshold voltage | VGS(th) | -1 | | -2.5 | V | VDS =VGS, ID = -250µA | 2 |+| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS = ±20V | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS = -24V, VGS =0V | 2 |+| Drain-source on-state resistance (VGS = -10V) | RDS(on) | | | 98 | mΩ | VGS = -10V, ID = -3.0A | 2 |+| Drain-source on-state resistance (VGS = -4.5V) | RDS(on) | | | 165 | mΩ | VGS = -4.5V, ID = -2.5A | 2 |+| Diode forward voltage | VSD | | -0.8 | -1.2 | V | IS=1A, VGS=0V | 2 |+| Continuous Source-Drain Diode Current | IS | | | -1.3 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `KIRLML5203TRPBF`
page.json+200−1@@ -147,6 +147,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "458bc1253e4e0baf",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Diode Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -24,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "t≤5s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = -250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -2.5,+ "conditions": "VDS =VGS, ID = -250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS =0V, VGS = ±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -24V, VGS =0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (VGS = -10V)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 98,+ "conditions": "VGS = -10V, ID = -3.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (VGS = -4.5V)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 165,+ "conditions": "VGS = -4.5V, ID = -2.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "IS=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +387,4 @@ "visibility": { "public": true }-}+}