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kgf50n60kda: factory component page (tier=lcsc)

Ray ·6ad843c011 ·2mo ago ·parent 9d5f507
1 file changed +93−8
page.json+93−8
@@ -1,13 +1,103 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "kgf50n60kda",+  "title": "KGF50N60KDA",+  "brief": "KEC Semicon IGBT Transistors / Modules, TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "KEC Semicon IGBT Transistors / Modules, TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "kgf50n60kda"   ],+  "component": {+    "mpn": "KGF50N60KDA",+    "manufacturer": "KEC Semicon",+    "package": "TO-247-3",+    "pin_count": 4,+    "category": "Transistors/Thyristors",+    "subcategory": "IGBT Transistors / Modules",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894844844040192",+    "parts": {+      "symbol": "kgf50n60kda.kicad_sym",+      "footprint": "kgf50n60kda.kicad_mod",+      "model_3d": "kgf50n60kda.glb",+      "model_3d_step": "kgf50n60kda.step",+      "lbr": "kgf50n60kda.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Insulated gate control terminal. Gate-emitter voltage rating VGES = +/-20V; typical gate threshold VGE(th) = 5.5V (4.5V min, 7V max at IC=5mA). Drive with VGE=15V for full enhancement; total gate charge Qg ~200nC."+      },+      {+        "number": "2",+        "name": "C",+        "type": "passive",+        "description": "Collector. IGBT high-side power terminal and cathode of the co-packaged anti-parallel fast recovery diode. Collector-emitter breakdown VCES = 600V; continuous IC = 100A @ Tc=25C (50A @ Tc=100C); pulsed ICM = 150A. Electrically connected to the metal tab of the TO-247 package."+      },+      {+        "number": "3",+        "name": "E",+        "type": "passive",+        "description": "Emitter. IGBT low-side power terminal and anode of the co-packaged anti-parallel fast recovery diode. Diode continuous forward current IF = 50A @ Tc=100C, IFM = 100A, typical VF = 1.8V @ IF=50A."+      },+      {+        "number": "TAB",+        "name": "C",+        "type": "passive",+        "description": "Metal mounting tab, electrically connected to the Collector. Provides thermal path to heatsink; junction-to-case thermal resistance Rth(JC) = 0.45 C/W (IGBT), 1.0 C/W (diode). Must be electrically isolated from heatsink if grounded chassis is used."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894844844040192",+        "pages": 8,+        "sha256": "d3a5395d9ddae9ea",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 4,+        "described": 4,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "KEC Semicon",+      "Package": "TO-247-3",+      "Category": "Transistors/Thyristors",+      "Pins": "4"+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "kgf50n60kda"+  ],+  "discovery_pitch": "KGF50N60KDA (KEC Semicon) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +115,5 @@     "docs/kgf50n60kda-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file