component
JY2312X
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
jy2312x: specified limits as data (metadata.characteristics, 13 rows from the datasheet)
2 files changed
+184−1
README.md+20@@ -21,6 +21,26 @@ JY2312X from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extract | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (VGS=0V) | VDS | | | 20 | V | VGS=0V | 1 |+| Gate-Source Voltage (VDS=0V) | VGS | -12 | | 12 | V | VDS=0V | 1 |+| Drain Current-Continuous | ID | | | 6 | A | TA=25℃ (Table 1 header) | 1 |+| Drain Current-Continuous @ Current-Pulsed (Note 1) | IDM (pluse) | | | 16 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |+| Maximum Power Dissipation | PD | | | 1.3 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | | V | VGS=0V ID=250μA | 2 |+| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.1 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 18 | 26 | mΩ | VGS=4.5V, ID=5A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 23 | 34 | mΩ | VGS=2.5V, ID=4A | 2 |+| Forward Transconductance | gFS | 4 | 8 | | S | VDS=5V,ID=5A | 2 |+| Thermal Resistance, Junction-to-Ambient | RJA | | 96 | | ℃/W | | 1 |+ ## CAD (KiCad official) - Symbol: `JY2312X`
page.json+164−1@@ -148,6 +148,169 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "94263a9604178b80",+ "rows": [+ {+ "name": "Drain-Source Voltage (VGS=0V)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VGS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (VDS=0V)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "VDS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TA=25℃ (Table 1 header)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous @ Current-Pulsed (Note 1)",+ "symbol": "IDM (pluse)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Repetitive rating: pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±12V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": 22,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.7,+ "max": 1.1,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 26,+ "conditions": "VGS=4.5V, ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 23,+ "max": 34,+ "conditions": "VGS=2.5V, ID=4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 4,+ "typ": 8,+ "max": null,+ "conditions": "VDS=5V,ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 96,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +352,4 @@ "visibility": { "public": true }-}+}