component
JSM6435
Public Made by Adomby adom
JSMSEMI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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jsm6435: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+275−1
README.md+27@@ -27,6 +27,33 @@ JSM6435 from JSMSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -30 | | | V | | 1 |+| Gate-Source Voltage | VGS | -25 | | 25 | V | | 1 |+| Continuous Drain Current (TC=25°C) | ID | -34 | | | A | TC=25°C | 1 |+| Continuous Drain Current (TC=100°C) | ID | -21.5 | | | A | TC=100°C | 1 |+| Pulsed Drain Current | IDM | -95 | | | A | | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 24 | 30 | °C/W | t ≤ 10s | 1 |+| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 53 | 64 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Case (Steady-State) | RθJC | | 3.4 | 4 | °C/W | Steady-State | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | ID=-250µA, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-30V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±25V | 2 |+| Gate Threshold Voltage | VGS(th) | -1.7 | -2.3 | -3 | V | VDS=VGS, ID=-250µA | 2 |+| On-State Drain Current | ID(ON) | -95 | | | A | VGS=-10V, VDS=-5V | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | | 0.012 | Ω | VGS=-10V, ID=-20A | 1 |+| Static Drain-Source On-Resistance | RDS(ON) | | | 0.02 | Ω | VGS=-5V, ID=-15A | 1 |+| Diode Forward Voltage | VSD | | -0.73 | -1 | V | IS=-1A, VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | -35 | A | | 2 |+| Input Capacitance | Ciss | | 1130 | 1400 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |+| Gate Resistance | Rg | | 5.8 | 8 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+ ## CAD (KiCad official) - Symbol: `JSM6435`
page.json+248−1@@ -185,6 +185,253 @@ "Package": "DFN-8(5x6)", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0c3a6f30205def36",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TC=25°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -34,+ "typ": null,+ "max": null,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TC=100°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -21.5,+ "typ": null,+ "max": null,+ "conditions": "TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -95,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (t ≤ 10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 24,+ "max": 30,+ "conditions": "t ≤ 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (Steady-State)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 53,+ "max": 64,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case (Steady-State)",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 3.4,+ "max": 4,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "ID=-250µA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-30V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±25V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.7,+ "typ": -2.3,+ "max": -3,+ "conditions": "VDS=VGS, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(ON)",+ "kind": "electrical",+ "unit": "A",+ "min": -95,+ "typ": null,+ "max": null,+ "conditions": "VGS=-10V, VDS=-5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.012,+ "conditions": "VGS=-10V, ID=-20A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.02,+ "conditions": "VGS=-5V, ID=-15A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.73,+ "max": -1,+ "conditions": "IS=-1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -35,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1130,+ "max": 1400,+ "conditions": "VGS=0V, VDS=-15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 5.8,+ "max": 8,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +473,4 @@ "visibility": { "public": true }-}+}