component
IRLML0100TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irlml0100trpbf-vb: specified limits as data (metadata.characteristics, 41 rows from the datasheet)
2 files changed
+548−1
README.md+48@@ -21,6 +21,54 @@ IRLML0100TRPBF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descript | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VDS = 0 V, ID = 250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 1.2 | | 2.8 | V | VDS = VGS, ID = 250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | 5 | | | A | VDS 5 V, VGS = 4.5 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.24 | Ω | VGS = 10 V, ID = 1.5 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.25 | Ω | VGS = 6 V, ID = 1 A | 2 |+| Gate Resistance | Rg | 0.3 | 1.4 | 2.8 | Ω | f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 5.2 | 10.4 | nC | VDS = 50 V, VGS = 10 V, ID = 1.6 A | 2 |+| Total Gate Charge | Qg | | 2.9 | 5.8 | nC | VDS = 50 V, VGS = 4.5 V, ID = 1.6 A | 2 |+| Turn-On Delay Time | td(on) | | 30 | 45 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 |+| Rise Time | tr | | 26 | 39 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 |+| Turn-Off Delay Time | td(off) | | 17 | 26 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 |+| Fall Time | tf | | 12 | 20 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 |+| Turn-On Delay Time | td(on) | | 6 | 12 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 |+| Rise Time | tr | | 10 | 20 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 |+| Turn-Off Delay Time | td(off) | | 10 | 20 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 |+| Fall Time | tf | | 6 | 12 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 |+| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | 20 | A | | 2 |+| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 1.3 A | 2 |+| Body Diode Reverse Recovery Time | trr | | 22 | 33 | ns | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 21 | 32 | nC | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Drain-Source Voltage | VDS | | | 100 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Pulsed Drain Current | IDM | | | 7 | A | t = 300 µs | 1 |+| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | | | 1 | A | TA = 25 °C | 1 |+| Single Pulse Avalanche Current | IAS | | | 5 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 1.25 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 75 | 100 | °C/W | t = 5 s | 1 |+| Maximum Junction-to-Ambient | RthJA | | | 166 | °C/W | steady state (note d) | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 40 | 50 | °C/W | Steady state | 1 |+| VDS Temperature Coefficient | ΔVDS/ΔTJ | | 105 | | mV/°C | ID = 250 µA | 2 |+| VGS(th) Temperature Coefficient | ΔVGS(th)/ΔTJ | | -5.2 | | mV/°C | | 2 |+ ## CAD (KiCad official) - Symbol: `IRLML0100TRPBF-VB`
page.json+500−1@@ -147,6 +147,505 @@ "Package": "SOT-23(TO-236)", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ce1e77316fc0c302",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VDS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": null,+ "max": 2.8,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 100 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 100 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "VDS 5 V, VGS = 4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.24,+ "conditions": "VGS = 10 V, ID = 1.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "VGS = 6 V, ID = 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.3,+ "typ": 1.4,+ "max": 2.8,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.2,+ "max": 10.4,+ "conditions": "VDS = 50 V, VGS = 10 V, ID = 1.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.9,+ "max": 5.8,+ "conditions": "VDS = 50 V, VGS = 4.5 V, ID = 1.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": 45,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 26,+ "max": 39,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 17,+ "max": 26,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": 12,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": 12,+ "conditions": "VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 1.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 33,+ "conditions": "IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 21,+ "max": 32,+ "conditions": "IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "t = 300 µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "t = 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 166,+ "conditions": "steady state (note d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "VDS Temperature Coefficient",+ "symbol": "ΔVDS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 105,+ "max": null,+ "conditions": "ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VGS(th) Temperature Coefficient",+ "symbol": "ΔVGS(th)/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": -5.2,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +688,4 @@ "visibility": { "public": true }-}+}