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IRFR3806TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated gate input controlling channel conduction. Absolute maximum VGS = \u00b120 V; typical gate threshold voltage VGS(th) = 1 to 3 V."+ "description": "Gate. Insulated gate input controlling channel conduction. Absolute maximum VGS = ±20 V; typical gate threshold voltage VGS(th) = 1 to 3 V." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. High-side power terminal of the N-channel MOSFET. Rated VDS = 60 V, continuous ID = 58 A at TC = 25 \u00b0C, pulsed IDM = 100 A. Electrically common with the exposed tab."+ "description": "Drain. High-side power terminal of the N-channel MOSFET. Rated VDS = 60 V, continuous ID = 58 A at TC = 25 °C, pulsed IDM = 100 A. Electrically common with the exposed tab." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Low-side power terminal of the N-channel MOSFET and anode of the intrinsic body diode. Continuous source current IS = 50 A; diode forward voltage VSD \u2248 1 V at IF = 20 A."+ "description": "Source. Low-side power terminal of the N-channel MOSFET and anode of the intrinsic body diode. Continuous source current IS = 50 A; diode forward voltage VSD ≈ 1 V at IF = 20 A." }, { "number": "4",@@ -120,5 +120,8 @@ "docs/irfr3806trpbf-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }