component
IRFML8244TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irfml8244trpbf: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ IRFML8244TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 25 | V | | 1 |+| Continuous Drain Current | ID | | | 5.8 | A | VGS @ 10V, TA = 25°C | 1 |+| Continuous Drain Current | ID | | | 4.6 | A | VGS @ 10V, TA = 70°C | 1 |+| Pulsed Drain Current | IDM | | | 24 | A | | 1 |+| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25°C | 1 |+| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70°C | 1 |+| Linear Derating Factor | | | | 0.01 | W/°C | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 25 | | | V | VGS = 0V, ID = 250μA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 20 | 24 | mΩ | VGS = 10V, ID = 5.8A | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 32 | 41 | mΩ | VGS = 4.5V, ID = 4.6A | 2 |+| Gate Threshold Voltage | VGS(th) | 1.35 | 1.7 | 2.35 | V | VDS = VGS, ID = 10μA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS = 20V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 150 | μA | VDS = 20V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |+| Forward Transconductance | gfs | 10 | | | S | VDS = 10V, ID = 5.8A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25°C, IS = 5.8A, VGS = 0V | 2 |+| Reverse Recovery Time | trr | | 11 | 17 | ns | TJ = 25°C, VR = 20V, IF = 5.8A | 2 |+| Reverse Recovery Charge | Qrr | | 4.2 | 6.3 | nC | TJ = 25°C, VR = 20V, IF = 5.8A, di/dt = 100A/μs | 2 |+| Junction-to-Ambient | RθJA | | | 100 | °C/W | | 1 |+| Junction-to-Ambient (t<10s) | RθJA | | | 99 | °C/W | t<10s | 1 |+ ## CAD (KiCad official) - Symbol: `IRFML8244TRPBF`
page.json+284−1@@ -149,6 +149,289 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f321ee18fbe2523c",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.8,+ "conditions": "VGS @ 10V, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.6,+ "conditions": "VGS @ 10V, TA = 70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 24,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA = 70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.01,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 20,+ "max": 24,+ "conditions": "VGS = 10V, ID = 5.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 32,+ "max": 41,+ "conditions": "VGS = 4.5V, ID = 4.6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.35,+ "typ": 1.7,+ "max": 2.35,+ "conditions": "VDS = VGS, ID = 10μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 20V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VDS = 20V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VDS = 10V, ID = 5.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "TJ = 25°C, IS = 5.8A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 17,+ "conditions": "TJ = 25°C, VR = 20V, IF = 5.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4.2,+ "max": 6.3,+ "conditions": "TJ = 25°C, VR = 20V, IF = 5.8A, di/dt = 100A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient (t<10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 99,+ "conditions": "t<10s",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +473,4 @@ "visibility": { "public": true }-}+}