component
IRF9630PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irf9630pbf: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
2 files changed
+405−1
README.md+37@@ -21,6 +21,43 @@ IRF9630PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (absolute maximum) | VDS | -200 | | | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | -6.5 | | | A | TC = 25 °C | 1 |+| Continuous Drain Current | ID | -4 | | | A | TC = 100 °C | 1 |+| Pulsed Drain Current | IDM | -26 | | | A | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 500 | mJ | | 1 |+| Repetitive Avalanche Current | IAR | -6.4 | | | A | | 1 |+| Repetitive Avalanche Energy | EAR | | | 7.4 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 74 | W | TC = 25 °C | 1 |+| Peak Diode Recovery dV/dt | dV/dt | -5 | | | V/ns | | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s | 1 |+| Maximum Junction-to-Ambient | RthJA | | | 62 | °C/W | | 2 |+| Case-to-Sink, Flat, Greased Surface | RthCS | | 0.5 | | °C/W | | 2 |+| Maximum Junction-to-Case (Drain) | RthJC | | | 1.7 | °C/W | | 2 |+| Drain-Source Breakdown Voltage | VDS | -200 | | | V | VGS = 0 V, ID = -250 μA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -2 | | -4 | V | VDS = VGS, ID = -250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS = -200 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.8 | Ω | VGS = -10 V, ID = -3.9 A | 2 |+| Forward Transconductance | gfs | 2.8 | | | S | VDS = -50 V, ID = -3.9 A | 2 |+| Total Gate Charge | Qg | | | 29 | nC | VGS = -10 V, ID = -6.5 A, VDS = -160 V | 2 |+| Gate-Source Charge | Qgs | | | 5.4 | nC | | 2 |+| Gate-Drain Charge | Qgd | | | 15 | nC | | 2 |+| Continuous Source-Drain Diode Current | IS | | | 6.5 | A | | 2 |+| Pulsed Diode Forward Current | ISM | | | 26 | A | | 2 |+| Body Diode Voltage | VSD | | | 6.5 | V | TJ = 25 °C, IS = -6.5 A, VGS = 0 V | 2 |+| Body Diode Reverse Recovery Time | trr | | 200 | 300 | ns | TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 1.9 | 2.9 | μC | | 2 |+ ## CAD (KiCad official) - Symbol: `IRF9630PBF`
page.json+368−1@@ -150,6 +150,373 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "26a5f1cb8caea3c9",+ "rows": [+ {+ "name": "Drain-Source Voltage (absolute maximum)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -200,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6.5,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4,+ "typ": null,+ "max": null,+ "conditions": "TC = 100 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -26,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6.4,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 7.4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 74,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dV/dt",+ "symbol": "dV/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Recommendations (Peak Temperature)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Case-to-Sink, Flat, Greased Surface",+ "symbol": "RthCS",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case (Drain)",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.7,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -200,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -2,+ "typ": null,+ "max": -4,+ "conditions": "VDS = VGS, ID = -250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = -200 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VDS = -160 V, VGS = 0 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "VGS = -10 V, ID = -3.9 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 2.8,+ "typ": null,+ "max": null,+ "conditions": "VDS = -50 V, ID = -3.9 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 29,+ "conditions": "VGS = -10 V, ID = -6.5 A, VDS = -160 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 26,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 6.5,+ "conditions": "TJ = 25 °C, IS = -6.5 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 200,+ "max": 300,+ "conditions": "TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "μC",+ "min": null,+ "typ": 1.9,+ "max": 2.9,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +558,4 @@ "visibility": { "public": true }-}+}