component
IRF840PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irf840pbf: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ IRF840PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | V(BR)DSS | 500 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 25 | μA | VDS = 500 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.85 | Ω | VGS = 10 V, ID = 4.8 A (note b) | 2 |+| Forward Transconductance | gfs | 4.9 | | | S | VDS = 50 V, ID = 4.8 A (note b) | 2 |+| Gate Input Resistance | Rg | 0.6 | | 2.8 | Ω | f = 1 MHz, open drain | 2 |+| Total Gate Charge | Qg | | | 63 | nC | VGS = 10 V, ID = 8 A, VDS = 400 V, see fig. 6 and 13 (note b) | 2 |+| Gate-Source Charge | Qgs | | | 9.3 | nC | | 2 |+| Gate-Drain Charge | Qgd | | | 32 | nC | | 2 |+| Continuous Source-Drain Diode Current | IS | | | 8 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |+| Pulsed Diode Forward Current | ISM | | | 32 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 2 |+| Body Diode Voltage | VSD | | | 2 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V (note b) | 2 |+| Body Diode Reverse Recovery Time | trr | | 460 | 970 | ns | TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs (note b) | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 4.2 | 8.9 | μC | | 2 |+| Drain-Source Voltage | VDS | | | 500 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 8 | A | VGS at 10 V, TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | 5.1 | A | VGS at 10 V, TC = 100 °C | 1 |+| Pulsed Drain Current | IDM | | | 32 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 |+| Linear Derating Factor | | | | 1 | W/°C | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 510 | mJ | Note b: VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 8.0 A | 1 |+| Repetitive Avalanche Current | IAR | | | 8 | A | Note a: repetitive rating | 1 |+| Repetitive Avalanche Energy | EAR | | | 13 | mJ | Note a: repetitive rating | 1 |+| Maximum Power Dissipation | PD | | | 125 | W | TC = 25 °C | 1 |+| Peak Diode Recovery dV/dt | dV/dt | | | 3.5 | V/ns | Note c: ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Soldering Recommendations (Peak temperature) | | | | 300 | °C | for 10 s, note d: 1.6 mm from case | 1 |+| Mounting Torque | | | | 10 | lbf · in | 6-32 or M3 screw | 1 |+| Mounting Torque | | | | 1.1 | N · m | 6-32 or M3 screw | 1 |+| Maximum Junction-to-Ambient | RthJA | | | 62 | °C/W | | 2 |+| Case-to-Sink, Flat, Greased Surface | RthCS | | 0.5 | | °C/W | | 2 |+| Maximum Junction-to-Case (Drain) | RthJC | | | 1 | °C/W | | 2 |+ ## CAD (KiCad official) - Symbol: `IRF840PBF`
page.json+416−1@@ -150,6 +150,421 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "dc4d322c72f43d1f",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VDS = 500 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 400 V, VGS = 0 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "VGS = 10 V, ID = 4.8 A (note b)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 4.9,+ "typ": null,+ "max": null,+ "conditions": "VDS = 50 V, ID = 4.8 A (note b)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Input Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.6,+ "typ": null,+ "max": 2.8,+ "conditions": "f = 1 MHz, open drain",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 63,+ "conditions": "VGS = 10 V, ID = 8 A, VDS = 400 V, see fig. 6 and 13 (note b)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 9.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "MOSFET symbol showing the integral reverse p-n junction diode",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "Note a: repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TJ = 25 °C, IS = 8 A, VGS = 0 V (note b)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 460,+ "max": 970,+ "conditions": "TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs (note b)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "μC",+ "min": null,+ "typ": 4.2,+ "max": 8.9,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "VGS at 10 V, TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.1,+ "conditions": "VGS at 10 V, TC = 100 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "Note a: repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 510,+ "conditions": "Note b: VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 8.0 A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "Note a: repetitive rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 13,+ "conditions": "Note a: repetitive rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dV/dt",+ "symbol": "dV/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 3.5,+ "conditions": "Note c: ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Recommendations (Peak temperature)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "for 10 s, note d: 1.6 mm from case",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "lbf · in",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "6-32 or M3 screw",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "N · m",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "6-32 or M3 screw",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Case-to-Sink, Flat, Greased Surface",+ "symbol": "RthCS",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case (Drain)",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +606,4 @@ "visibility": { "public": true }-}+}