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IRF8252TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,7 +32,7 @@ "number": "1", "name": "S", "type": "passive",- "description": "Source terminal 1 of the N-channel MOSFET. Tied internally to the source; connect in parallel with pins 2 and 3 to the source net. Continuous source current (diode conduction) IS = 2.9 A at TA = 25 \u00b0C."+ "description": "Source terminal 1 of the N-channel MOSFET. Tied internally to the source; connect in parallel with pins 2 and 3 to the source net. Continuous source current (diode conduction) IS = 2.9 A at TA = 25 °C." }, { "number": "2",@@ -50,7 +50,7 @@ "number": "4", "name": "G", "type": "input",- "description": "Gate terminal of the N-channel MOSFET. Gate threshold voltage VGS(th) = 1.0 V (min) to 3.0 V (max) at ID = 250 \u00b5A. Absolute maximum VGS = \u00b120 V; typical gate resistance Rg = 1.1 \u03a9 at 1 MHz; total gate charge Qg = 45 nC typ (VDS = 15 V, VGS = 4.5 V, ID = 20 A)."+ "description": "Gate terminal of the N-channel MOSFET. Gate threshold voltage VGS(th) = 1.0 V (min) to 3.0 V (max) at ID = 250 µA. Absolute maximum VGS = ±20 V; typical gate resistance Rg = 1.1 Ω at 1 MHz; total gate charge Qg = 45 nC typ (VDS = 15 V, VGS = 4.5 V, ID = 20 A)." }, { "number": "5",@@ -74,7 +74,7 @@ "number": "8", "name": "D", "type": "passive",- "description": "Drain terminal 4 of the N-channel MOSFET. Parallel drain connection with pins 5, 6, and 7. Continuous drain current ID = 25 A at TA = 25 \u00b0C (TJ = 150 \u00b0C)."+ "description": "Drain terminal 4 of the N-channel MOSFET. Parallel drain connection with pins 5, 6, and 7. Continuous drain current ID = 25 A at TA = 25 °C (TJ = 150 °C)." } ], "provenance": {@@ -144,5 +144,8 @@ "docs/irf8252trpbf-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }