component
IRF820PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irf820pbf: specified limits as data (metadata.characteristics, 43 rows from the datasheet)
2 files changed
+574−1
README.md+50@@ -21,6 +21,56 @@ IRF820PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 500 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 2.5 | A | VGS at 10 V, TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | 1.6 | A | VGS at 10 V, TC = 100 °C | 1 |+| Pulsed Drain Current | IDM | | | 8 | A | | 1 |+| Linear Derating Factor | | | | 0.4 | W/°C | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 210 | mJ | | 1 |+| Repetitive Avalanche Current | IAR | | | 2.5 | A | | 1 |+| Repetitive Avalanche Energy | EAR | | | 5 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 50 | W | TC = 25 °C | 1 |+| Peak Diode Recovery dV/dt | dV/dt | | | 3.5 | V/ns | | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s | 1 |+| Mounting Torque | | | | 10 | lbf·in | 6-32 or M3 screw | 1 |+| Mounting Torque | | | | 1.1 | N·m | 6-32 or M3 screw | 1 |+| Maximum Junction-to-Ambient | RthJA | | | 62 | °C/W | | 2 |+| Maximum Junction-to-Case (Drain) | RthJC | | | 2.5 | °C/W | | 2 |+| Case-to-Sink, Flat, Greased Surface | RthCS | | 0.5 | | °C/W | Flat, greased surface | 2 |+| Drain-Source Breakdown Voltage | VDS | 500 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| VDS Temperature Coefficient | VDS/TJ | | 0.59 | | V/°C | Reference to 25 °C, ID = 1 mA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 25 | μA | VDS = 500 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 3 | Ω | VGS = 10 V, ID = 1.5 A | 2 |+| Forward Transconductance | gfs | 1.5 | | | S | VDS = 50 V, ID = 1.5 A | 2 |+| Input Capacitance | Ciss | | 360 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |+| Output Capacitance | Coss | | 92 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 37 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |+| Total Gate Charge | Qg | | | 24 | nC | VGS = 10 V, ID = 2.1 A, VDS = 400 V | 2 |+| Gate-Source Charge | Qgs | | | 3.3 | nC | VGS = 10 V, ID = 2.1 A, VDS = 400 V | 2 |+| Gate-Drain Charge | Qgd | | | 13 | nC | VGS = 10 V, ID = 2.1 A, VDS = 400 V | 2 |+| Turn-On Delay Time | td(on) | | 8 | | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 |+| Rise Time | tr | | 8.6 | | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 33 | | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 |+| Fall Time | tf | | 16 | | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 |+| Internal Drain Inductance | LD | | 4.5 | | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |+| Internal Source Inductance | LS | | 7.5 | | nH | | 2 |+| Continuous Source-Drain Diode Current | IS | | | 2.5 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |+| Pulsed Diode Forward Current | ISM | | | 8 | A | | 2 |+| Body Diode Voltage | VSD | | | 1.6 | V | TJ = 25 °C, IS = 2.5 A, VGS = 0 V | 2 |+| Body Diode Reverse Recovery Time | trr | | 260 | 520 | ns | TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 0.7 | 1.4 | nC | TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs | 2 |+ ## CAD (KiCad official) - Symbol: `IRF820PBF`
page.json+524−1@@ -150,6 +150,529 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c2a5584f3fe73975",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "VGS at 10 V, TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "VGS at 10 V, TC = 100 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 210,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dV/dt",+ "symbol": "dV/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 3.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Recommendations (Peak Temperature)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "lbf·in",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "6-32 or M3 screw",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "N·m",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "6-32 or M3 screw",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case (Drain)",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Case-to-Sink, Flat, Greased Surface",+ "symbol": "RthCS",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "Flat, greased surface",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VDS Temperature Coefficient",+ "symbol": "VDS/TJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.59,+ "max": null,+ "conditions": "Reference to 25 °C, ID = 1 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VDS = 500 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 400 V, VGS = 0 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "VGS = 10 V, ID = 1.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 1.5,+ "typ": null,+ "max": null,+ "conditions": "VDS = 50 V, ID = 1.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 360,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 25 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 92,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 25 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 37,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 25 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 24,+ "conditions": "VGS = 10 V, ID = 2.1 A, VDS = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 3.3,+ "conditions": "VGS = 10 V, ID = 2.1 A, VDS = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 13,+ "conditions": "VGS = 10 V, ID = 2.1 A, VDS = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8.6,+ "max": null,+ "conditions": "VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 33,+ "max": null,+ "conditions": "VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Internal Drain Inductance",+ "symbol": "LD",+ "kind": "electrical",+ "unit": "nH",+ "min": null,+ "typ": 4.5,+ "max": null,+ "conditions": "Between lead, 6 mm (0.25\") from package and center of die contact",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Internal Source Inductance",+ "symbol": "LS",+ "kind": "electrical",+ "unit": "nH",+ "min": null,+ "typ": 7.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "MOSFET symbol showing the integral reverse p-n junction diode",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TJ = 25 °C, IS = 2.5 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 260,+ "max": 520,+ "conditions": "TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.7,+ "max": 1.4,+ "conditions": "TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +714,4 @@ "visibility": { "public": true }-}+}