component
IRF7854TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irf7854trpbf: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
2 files changed
+379−1
README.md+35@@ -26,6 +26,41 @@ IRF7854TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDS | | | 80 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 10 | A | TA = 25°C, VGS @ 10V | 1 |+| Continuous Drain Current | ID | | | 7.9 | A | TA = 70°C, VGS @ 10V | 1 |+| Pulsed Drain Current | IDM | | | 79 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TA = 25°C | 1 |+| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |+| Peak Diode Recovery dv/dt | dv/dt | | | 11 | V/ns | ISD ≤ 6.0A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C | 1 |+| Operating Junction Temperature | TJ | -55 | | 150 | °C | | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |+| Junction-to-Drain Lead Thermal Resistance | RθJL | | | 20 | °C/W | Junction-to-Drain Lead | 1 |+| Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | PCB Mount; 1 inch square copper board, t ≤ 10 sec | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 80 | | | V | VGS = 0V, ID = 250µA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 11 | 13.4 | mΩ | VGS = 10V, ID = 10A | 2 |+| Gate Threshold Voltage | VGS(th) | 3 | | 4.9 | V | VDS = VGS, ID = 100µA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 80V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 80V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |+| Forward Transconductance | gfs | 12 | | | S | VDS = 25V, ID = 6.0A | 2 |+| Total Gate Charge | Qg | | 27 | 41 | nC | | 2 |+| Single Pulse Avalanche Energy | EAS | | | 110 | mJ | Starting TJ = 25°C, L = 6.0mH, RG = 25Ω, IAS = 6.0A | 2 |+| Avalanche Current | IAR | | | 6 | A | | 2 |+| Continuous Source Current (Body Diode) | IS | | | 2.3 | A | | 2 |+| Pulsed Source Current (Body Diode) | ISM | | | 79 | A | | 2 |+| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 6.0A, VGS = 0V | 2 |+| Reverse Recovery Time | trr | | 43 | 65 | ns | TJ = 25°C, IF = 6.0A, VDD = 25V, di/dt = 100A/µs | 2 |+| Reverse Recovery Charge | Qrr | | 76 | 110 | nC | TJ = 25°C, IF = 6.0A, VDD = 25V, di/dt = 100A/µs | 2 |+ ## CAD (KiCad official) - Symbol: `IRF7854TRPBF`
page.json+344−1@@ -179,6 +179,349 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "02b5ff6dd326a9ff",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "TA = 25°C, VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.9,+ "conditions": "TA = 70°C, VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 79,+ "conditions": "Repetitive rating; pulse width limited by max. junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.02,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "ISD ≤ 6.0A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Drain Lead Thermal Resistance",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Junction-to-Drain Lead",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "PCB Mount; 1 inch square copper board, t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 11,+ "max": 13.4,+ "conditions": "VGS = 10V, ID = 10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": null,+ "max": 4.9,+ "conditions": "VDS = VGS, ID = 100µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 80V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 80V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 12,+ "typ": null,+ "max": null,+ "conditions": "VDS = 25V, ID = 6.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 27,+ "max": 41,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Starting TJ = 25°C, L = 6.0mH, RG = 25Ω, IAS = 6.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 79,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TJ = 25°C, IS = 6.0A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 43,+ "max": 65,+ "conditions": "TJ = 25°C, IF = 6.0A, VDD = 25V, di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 76,+ "max": 110,+ "conditions": "TJ = 25°C, IF = 6.0A, VDD = 25V, di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +563,4 @@ "visibility": { "public": true }-}+}