component
IRF7475TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,7 +32,7 @@ "number": "1", "name": "S", "type": "passive",- "description": "Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are tied together internally as the Source. Continuous source-drain diode current up to 10 A at TC = 25 \u00b0C; body diode forward voltage ~0.8 V (typ.) at IS = 9 A."+ "description": "Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are tied together internally as the Source. Continuous source-drain diode current up to 10 A at TC = 25 °C; body diode forward voltage ~0.8 V (typ.) at IS = 9 A." }, { "number": "2",@@ -50,13 +50,13 @@ "number": "4", "name": "G", "type": "input",- "description": "Gate terminal of the N-channel MOSFET. VGS(th) = 1.0 V min / 3.0 V max at ID = 250 \u00b5A. Absolute maximum gate-source voltage VGS = \u00b120 V. Gate resistance Rg \u2248 1.8 \u03a9 (typ.), 3.6 \u03a9 (max) at 1 MHz."+ "description": "Gate terminal of the N-channel MOSFET. VGS(th) = 1.0 V min / 3.0 V max at ID = 250 µA. Absolute maximum gate-source voltage VGS = ±20 V. Gate resistance Rg ≈ 1.8 Ω (typ.), 3.6 Ω (max) at 1 MHz." }, { "number": "5", "name": "D", "type": "passive",- "description": "Drain terminal of the N-channel MOSFET. Pins 5, 6, 7, and 8 are tied together internally as the Drain. VDS(max) = 30 V; RDS(on) = 0.008 \u03a9 (typ.) at VGS = 10 V, ID = 10 A."+ "description": "Drain terminal of the N-channel MOSFET. Pins 5, 6, 7, and 8 are tied together internally as the Drain. VDS(max) = 30 V; RDS(on) = 0.008 Ω (typ.) at VGS = 10 V, ID = 10 A." }, { "number": "6",@@ -144,5 +144,8 @@ "docs/irf7475trpbf-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }