component
IRF7475TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
← Commit history
page.json+122−8@@ -1,13 +1,132 @@ {+ "schema_version": 1,+ "type": "component", "slug": "irf7475trpbf-vb",+ "title": "IRF7475TRPBF-VB",+ "brief": "VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "irf7475trpbf-vb" ],+ "component": {+ "mpn": "IRF7475TRPBF-VB",+ "manufacturer": "VBsemi Elec",+ "package": "SO-8",+ "pin_count": 8,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603135083818217472",+ "parts": {+ "symbol": "irf7475trpbf-vb.kicad_sym",+ "footprint": "irf7475trpbf-vb.kicad_mod",+ "model_3d": "irf7475trpbf-vb.glb",+ "model_3d_step": "irf7475trpbf-vb.step",+ "lbr": "irf7475trpbf-vb.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "S",+ "type": "passive",+ "description": "Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are tied together internally as the Source. Continuous source-drain diode current up to 10 A at TC = 25 \u00b0C; body diode forward voltage ~0.8 V (typ.) at IS = 9 A."+ },+ {+ "number": "2",+ "name": "S",+ "type": "passive",+ "description": "Source terminal of the N-channel MOSFET. Paralleled with pins 1 and 3 to reduce package resistance and improve current handling."+ },+ {+ "number": "3",+ "name": "S",+ "type": "passive",+ "description": "Source terminal of the N-channel MOSFET. Paralleled with pins 1 and 2."+ },+ {+ "number": "4",+ "name": "G",+ "type": "input",+ "description": "Gate terminal of the N-channel MOSFET. VGS(th) = 1.0 V min / 3.0 V max at ID = 250 \u00b5A. Absolute maximum gate-source voltage VGS = \u00b120 V. Gate resistance Rg \u2248 1.8 \u03a9 (typ.), 3.6 \u03a9 (max) at 1 MHz."+ },+ {+ "number": "5",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal of the N-channel MOSFET. Pins 5, 6, 7, and 8 are tied together internally as the Drain. VDS(max) = 30 V; RDS(on) = 0.008 \u03a9 (typ.) at VGS = 10 V, ID = 10 A."+ },+ {+ "number": "6",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal of the N-channel MOSFET. Paralleled with pins 5, 7, and 8 for improved current handling and heat dissipation."+ },+ {+ "number": "7",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal of the N-channel MOSFET. Paralleled with pins 5, 6, and 8."+ },+ {+ "number": "8",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal of the N-channel MOSFET. Paralleled with pins 5, 6, and 7."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603135083818217472",+ "pages": null,+ "sha256": "d15fe608ba03c86a",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 8,+ "described": 8,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "VBsemi Elec",+ "Package": "SO-8",+ "Category": "Transistors/Thyristors",+ "Pins": "8"+ }+ },+ "variants": [+ {+ "mpn": "IRF7475TRPBF-VB",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "irf7475trpbf-vb"+ ],+ "discovery_pitch": "IRF7475TRPBF-VB (VBsemi Elec) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +144,5 @@ "docs/irf7475trpbf-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }