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IRF4104PBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -32,25 +32,25 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated MOSFET control terminal. Absolute maximum VGS = \u00b120 V; typical VGS(th) = 1.2 V to 2.5 V (VDS = VGS, ID = 250 \u00b5A). Gate resistance Rg \u2248 0.85 \u03a9 typ."+ "description": "Gate. Insulated MOSFET control terminal. Absolute maximum VGS = ±20 V; typical VGS(th) = 1.2 V to 2.5 V (VDS = VGS, ID = 250 µA). Gate resistance Rg ≈ 0.85 Ω typ." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. N-channel MOSFET drain, also electrically connected to the metal tab. Absolute maximum VDS = 40 V; continuous ID = 110 A at TC = 25 \u00b0C; pulsed IDM = 270 A."+ "description": "Drain. N-channel MOSFET drain, also electrically connected to the metal tab. Absolute maximum VDS = 40 V; continuous ID = 110 A at TC = 25 °C; pulsed IDM = 270 A." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. N-channel MOSFET source. Body diode from Source to Drain (VSD \u2248 0.8 V typ. at IS = 20 A, IS = 110 A continuous at TC = 25 \u00b0C)."+ "description": "Source. N-channel MOSFET source. Body diode from Source to Drain (VSD ≈ 0.8 V typ. at IS = 20 A, IS = 110 A continuous at TC = 25 °C)." }, { "number": "TAB", "name": "D", "type": "passive",- "description": "Heatsink tab, internally connected to the Drain. Used for thermal dissipation (RthJC = 0.33 \u00b0C/W typ.)."+ "description": "Heatsink tab, internally connected to the Drain. Used for thermal dissipation (RthJC = 0.33 °C/W typ.)." } ], "provenance": {@@ -120,5 +120,8 @@ "docs/irf4104pbf-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }